Next-generation mid-infrared sources
The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital
applications in molecular sensing, security and defense, energy conservation, and …
applications in molecular sensing, security and defense, energy conservation, and …
Boron-doped III–V semiconductors for Si-based optoelectronic devices
Optoelectronic devices on silicon substrates are essential not only to the optoelectronic
integrated circuit but also to low-cost lasers, large-area detectors, and so forth. Although …
integrated circuit but also to low-cost lasers, large-area detectors, and so forth. Although …
[HTML][HTML] Undoing band anticrossing in highly mismatched alloys by atom arrangement
The electronic structures of three highly mismatched alloys (HMAs)—GeC (Sn), Ga (In) NAs,
and BGa (In) As—were studied using density functional theory with HSE06 hybrid …
and BGa (In) As—were studied using density functional theory with HSE06 hybrid …
Boron substitution enhanced activity of BxGa1− xAs/GaAs photocatalyst for water splitting
X Zhang, G Lu, X Ning, C Wang - Applied Catalysis B: Environmental, 2022 - Elsevier
Photocatalytic visible water splitting is still impeded by slow kinetics of multi-electron-driven
water oxidation, fast carrier recombination and insufficient light absorption of the …
water oxidation, fast carrier recombination and insufficient light absorption of the …
Bowing of the band gap and spin-orbit splitting energy in BGaAs
BGaAs layers with the boron concentration up to 17.7% have been grown by molecular
beam epitaxy on GaAs and GaP substrates and studied by photoreflectance (PR) …
beam epitaxy on GaAs and GaP substrates and studied by photoreflectance (PR) …
[HTML][HTML] Effects of B and In on the band structure of BGa (In) As alloys
Highly mismatched semiconductor alloys (HMAs) offer unusual combinations of bandgap
and lattice constant, which are attractive for myriad applications. Dilute borides, such as BGa …
and lattice constant, which are attractive for myriad applications. Dilute borides, such as BGa …
[HTML][HTML] Electronic structure of BxGa1− xAs alloys using hybrid functionals
I Gulyas, R Kudrawiec, MA Wistey - Journal of Applied Physics, 2019 - pubs.aip.org
We present electronic band structure calculations of B x Ga 1− x As alloys over the full
composition range using HSE06 hybrid functionals. We find that at low boron percentages …
composition range using HSE06 hybrid functionals. We find that at low boron percentages …
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B (In) GaAs heterostructures …
T Hidouri, A Parisini, C Ferrari, D Orsi, A Baraldi… - Applied Surface …, 2022 - Elsevier
Abstract BGaAs/GaAs epilayers and BInGaAs/GaAs quantum well (QW) have been prepared
using metal–organic chemical vapor deposition under different growth conditions, and their …
using metal–organic chemical vapor deposition under different growth conditions, and their …
Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP
J Kopaczek, F Dybała, SJ Zelewski… - Journal of Physics D …, 2021 - iopscience.iop.org
BGaAs layers with boron concentrations of 4.1%, 7.4%, and 12.1% are grown by molecular
beam epitaxy on a GaP substrate and studied by optical absorption and photoreflectance …
beam epitaxy on a GaP substrate and studied by optical absorption and photoreflectance …
Thermodynamic and optoelectronic properties of GaAs (1− x) Mx (M= Fe, Cu) ternary compounds via first principles
PG Gonzales-Ormeño, MA Mendoza… - Materials Today …, 2022 - Elsevier
The electronic structure, band structure and optical properties of compounds GaAs (1− x) M
x (M= Fe, Cu), for x= 0. 25, 0.75, and 1 are discussed via Full-potential linearized augmented …
x (M= Fe, Cu), for x= 0. 25, 0.75, and 1 are discussed via Full-potential linearized augmented …