Next-generation mid-infrared sources

D Jung, S Bank, ML Lee, D Wasserman - Journal of Optics, 2017 - iopscience.iop.org
The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital
applications in molecular sensing, security and defense, energy conservation, and …

Boron-doped III–V semiconductors for Si-based optoelectronic devices

C Zhao, B Xu, Z Wang, Z Wang - Journal of Semiconductors, 2020 - iopscience.iop.org
Optoelectronic devices on silicon substrates are essential not only to the optoelectronic
integrated circuit but also to low-cost lasers, large-area detectors, and so forth. Although …

[HTML][HTML] Undoing band anticrossing in highly mismatched alloys by atom arrangement

Q Meng, SR Bank, MA Wistey - Journal of Applied Physics, 2024 - pubs.aip.org
The electronic structures of three highly mismatched alloys (HMAs)—GeC (Sn), Ga (In) NAs,
and BGa (In) As—were studied using density functional theory with HSE06 hybrid …

Boron substitution enhanced activity of BxGa1− xAs/GaAs photocatalyst for water splitting

X Zhang, G Lu, X Ning, C Wang - Applied Catalysis B: Environmental, 2022 - Elsevier
Photocatalytic visible water splitting is still impeded by slow kinetics of multi-electron-driven
water oxidation, fast carrier recombination and insufficient light absorption of the …

Bowing of the band gap and spin-orbit splitting energy in BGaAs

R Kudrawiec, MP Polak, KM McNicholas… - Materials Research …, 2020 - iopscience.iop.org
BGaAs layers with the boron concentration up to 17.7% have been grown by molecular
beam epitaxy on GaAs and GaP substrates and studied by photoreflectance (PR) …

[HTML][HTML] Effects of B and In on the band structure of BGa (In) As alloys

Q Meng, RH El-Jaroudi, RC White, T Dey… - Journal of Applied …, 2022 - pubs.aip.org
Highly mismatched semiconductor alloys (HMAs) offer unusual combinations of bandgap
and lattice constant, which are attractive for myriad applications. Dilute borides, such as BGa …

[HTML][HTML] Electronic structure of BxGa1− xAs alloys using hybrid functionals

I Gulyas, R Kudrawiec, MA Wistey - Journal of Applied Physics, 2019 - pubs.aip.org
We present electronic band structure calculations of B x Ga 1− x As alloys over the full
composition range using HSE06 hybrid functionals. We find that at low boron percentages …

Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B (In) GaAs heterostructures …

T Hidouri, A Parisini, C Ferrari, D Orsi, A Baraldi… - Applied Surface …, 2022 - Elsevier
Abstract BGaAs/GaAs epilayers and BInGaAs/GaAs quantum well (QW) have been prepared
using metal–organic chemical vapor deposition under different growth conditions, and their …

Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP

J Kopaczek, F Dybała, SJ Zelewski… - Journal of Physics D …, 2021 - iopscience.iop.org
BGaAs layers with boron concentrations of 4.1%, 7.4%, and 12.1% are grown by molecular
beam epitaxy on a GaP substrate and studied by optical absorption and photoreflectance …

Thermodynamic and optoelectronic properties of GaAs (1− x) Mx (M= Fe, Cu) ternary compounds via first principles

PG Gonzales-Ormeño, MA Mendoza… - Materials Today …, 2022 - Elsevier
The electronic structure, band structure and optical properties of compounds GaAs (1− x) M
x (M= Fe, Cu), for x= 0. 25, 0.75, and 1 are discussed via Full-potential linearized augmented …