Recent progress on the electronic structure, defect, and doping properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
Gallium oxide nanostructures: A review of synthesis, properties and applications
Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among
researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 …
researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 …
Gallium oxide-based solar-blind ultraviolet photodetectors
Abstract Gallium oxide (Ga 2 O 3) is an emerging ultrawide bandgap (UWBG)
semiconducting material as a key building block for the applications of power electronics …
semiconducting material as a key building block for the applications of power electronics …
Nanofunctional gallium oxide (Ga2O3) nanowires/nanostructures and their applications in nanodevices
A brief review on beta gallium oxide (β‐Ga2O3) nanowires (NWs) and nanostructures (NS)
is presented in this article. β‐Ga2O3 is a wide‐bandgap (Eg∼ 4.9 eV) semiconductor and …
is presented in this article. β‐Ga2O3 is a wide‐bandgap (Eg∼ 4.9 eV) semiconductor and …
Lanthanide-doped semiconductor nanocrystals: electronic structures and optical properties
W Luo, Y Liu, X Chen - Science China Materials, 2015 - Springer
Abstract Trivalent lanthanide (Ln 3+) ions doped semiconductor nanomaterials have
recently attracted considerable attention owing to their distinct optical properties and their …
recently attracted considerable attention owing to their distinct optical properties and their …
Persistent luminescence: an insight
Leading to advancement in technological manifestations the phenomenon of persistent
luminescence and growth of luminescent materials has witnessed a rapid headway in …
luminescence and growth of luminescent materials has witnessed a rapid headway in …
Long-lasting near-infrared persistent luminescence from β-Ga2O3: Cr3+ nanowire assemblies
Near-infrared (NIR) persistent luminescent β-Ga2O3: Cr3+ nanowire assemblies were
synthesized by a hydrothermal process followed by calcination. The phosphor exhibits more …
synthesized by a hydrothermal process followed by calcination. The phosphor exhibits more …
In-doped gallium oxide micro-and nanostructures: morphology, structure, and luminescence properties
The influence of indium doping on morphology, structural, and luminescence properties of
gallium oxide micro-and nanostructures is reported. Indium-doped gallium oxide micro-and …
gallium oxide micro-and nanostructures is reported. Indium-doped gallium oxide micro-and …