Dielectric breakdown of oxide films in electronic devices
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
Review and outlook on GaN and SiC power devices: industrial state-of-the-art, applications, and perspectives
We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride
(GaN) transistors available on the market for current and next-generation power electronics …
(GaN) transistors available on the market for current and next-generation power electronics …
Atomistic insights into adhesion characteristics of tungsten on titanium nitride using steered molecular dynamics with machine learning interatomic potential
E Cho, WJ Son, E Cho, I Jang, DS Kim, K Min - Scientific Reports, 2023 - nature.com
As transistor integration accelerates and miniaturization progresses, improving the
interfacial adhesion characteristics of complex metal interconnect has become a major issue …
interfacial adhesion characteristics of complex metal interconnect has become a major issue …
Effects of oxide electric field stress on the gate oxide reliability of commercial SiC power MOSFETs
In this work, the influence of various oxide electric field (E ox) stress conditions on the gate
oxide lifetime, gate leakage current, and threshold voltage of 1.2 kV 4H-SiC power planar …
oxide lifetime, gate leakage current, and threshold voltage of 1.2 kV 4H-SiC power planar …
The road to a robust and affordable SiC power MOSFET technology
This article provides a detailed study of performance and reliability issues and trade-offs in
silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage …
silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage …
Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs
The effects of different screening methods for non-infant extrinsic defects on the gate oxide
reliability of commercial 1.2 kV 4H-SiC power MOSFETs are investigated. This study aims to …
reliability of commercial 1.2 kV 4H-SiC power MOSFETs are investigated. This study aims to …
Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs
650 V SiC planar MOSFETs with various JFET widths, JFET doping concentrations, and gate
oxide thicknesses were fabricated by a commercial SiC foundry on two six-inch SiC epitaxial …
oxide thicknesses were fabricated by a commercial SiC foundry on two six-inch SiC epitaxial …
High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al2O3, Ferro-Electric Charge-Trap (FEG) GaN-HEMT
This article investigates a hybrid ferroelectric charge trap (HFCT)-based HfZrO4/HfOXNY/
Al2O3/AlGaN/GaN gate-stack under constant positive gate voltage stress over time and …
Al2O3/AlGaN/GaN gate-stack under constant positive gate voltage stress over time and …
Reliability comparison of commercial planar and trench 4H-SiC Power MOSFETs
The gate oxide reliability, bias temperature insta-bility (BTI), and short-circuit capability for
commercial SiC power MOSFETs with planar and trench structures are evaluated and …
commercial SiC power MOSFETs with planar and trench structures are evaluated and …
Comparison of gate oxide lifetime predictions with charge-to-breakdown approach and constant-voltage TDDB on SiC power MOSFET
The gate oxide reliability for commercial silicon carbide (SiC) power metal-oxide-
semiconductor field-effect-transistors (MOSFETs) is significant for their applications. The …
semiconductor field-effect-transistors (MOSFETs) is significant for their applications. The …