Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation …
NAF Othman, SFWM Hatta, N Soin - Journal of Electronic Materials, 2018 - Springer
Stress-engineered fin-shaped field effect transistors (FinFET) using germanium (Ge) is a
promising performance booster to replace silicon (Si) due to its high holes mobility. This …
promising performance booster to replace silicon (Si) due to its high holes mobility. This …
Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs
This paper presents the analytical modeling of subthreshold current and subthreshold swing
of short-channel fully-depleted (FD) strained-Si-on-insulator (SSOI) MOSFETs having …
of short-channel fully-depleted (FD) strained-Si-on-insulator (SSOI) MOSFETs having …
Analytical modeling of subthreshold current and swing of strained‐Si graded channel dual material double gate MOSFET with interface charges and analysis of circuit …
SR Suddapalli, BR Nistala - International journal of numerical …, 2021 - Wiley Online Library
In this paper, a two‐dimensional (2‐D) center channel potential based subthreshold current
(SC) and subthreshold swing (SS) are developed analytically for strained‐Si (s‐Si) graded …
(SC) and subthreshold swing (SS) are developed analytically for strained‐Si (s‐Si) graded …
Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon …
The present work gives some insight into the subthreshold behaviour of short-channel
double-material-gate strained-silicon on silicon—germanium MOSFETs in terms of …
double-material-gate strained-silicon on silicon—germanium MOSFETs in terms of …
Analytical modeling and simulation of subthreshold characteristics of back-gated SSGOI and SSOI MOSFETs: a comparative study
Abstract The Silicon–Germanium-on-Insulator (SGOI) and Silicon-on-Insulator (SOI) based
MOS structures are spearheading the strained-Si technology. The present work compares …
MOS structures are spearheading the strained-Si technology. The present work compares …
2-D analytical modeling of subthreshold current and subthreshold swing for ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs
In this paper, the subthreshold behavior of ion-implanted strained-Si double-material double-
gate (DMDG) MOSFETs has been analyzed by means of subthreshold current and …
gate (DMDG) MOSFETs has been analyzed by means of subthreshold current and …
Phosphorene source engineered stacked metal gate tunnel field effect transistor with enhanced scaling
M Kumar, KS Seong, SH Park - Superlattices and Microstructures, 2018 - Elsevier
In this simulation based study, we report a tunnel field effect transistor on SOI substrates with
phosphorene as source material to enhance the scaling of Si CMOS technology. The …
phosphorene as source material to enhance the scaling of Si CMOS technology. The …
Performance evaluation of phosphorene elevated source tunnel FET with Strained Channel and ferroelectric gate oxide
Present study explores electrostatically doped SOI heterojunction tunneling field-effect-
transistor (FET) along with elevated source of phosphorene. Device deals with the vertically …
transistor (FET) along with elevated source of phosphorene. Device deals with the vertically …
Above the Threshold Theoretical Analysis of Dual-Material-Gate (DMG) Tensile-Strained Si (sSi) on SGOI MOSFETs
M Kumar, S Singh, V Kumar - Latest Trends in Engineering and …, 2024 - taylorfrancis.com
This chapter presents a 2D analytical model of drain current for dual-material-gate (DMG)
tensile-strained Si (sSi) on silicon–germanium-on-insulator (SGOI) MOSFETs. Our model is …
tensile-strained Si (sSi) on silicon–germanium-on-insulator (SGOI) MOSFETs. Our model is …
[PDF][PDF] 单轴应变Si n 型金属氧化物半导体场效应晶体管源漏电流特性模型
吕懿， 张鹤鸣， 胡辉勇， 杨晋勇， 殷树娟， 周春宇 - 物理学报, 2015 - wulixb.iphy.ac.cn
本文在建立单轴应变Si n 型金属氧化物半导体场效应晶体管迁移率模型和阈值电压模型的基础
上, 基于器件不同的工作区域, 从基本的漂移扩散方程出发, 分别建立了单轴应变Si NMOSFET …
上, 基于器件不同的工作区域, 从基本的漂移扩散方程出发, 分别建立了单轴应变Si NMOSFET …