Silver (Ag) has been under development for use as interconnect material for power
electronics packaging since the late 1980s. Despite its long development history, high …

Soldering has been the main die attach technology for several decades. Recently, in order
to meet the high temperature electronic requirements (high temperature-operating SiC and …

A review is provided, which first considers low-temperature diffusion bonding with silver
nanomaterials as filler materials via thermal sintering for microelectronic applications, and …

Sintered silver joint is a porous silver that bonds a semiconductor die to the substrate as part
of the packaging process. Sintered Ag is one of the few possible bonding methods to fulfill …

We achieve robust bonding of large area power chip (≥ 100 mm 2) based on pressureless
sintering of silver particles at low temperature, ie, 250° C. The particle size of silver ranges …

Nanoinks are currently a topic of heightened interest with respect to low temperature
bonding processes and printable electronics. We have developed an innovative …

Recently, nanosilver pastes have emerged as one of the most promising high temperature
bonding materials for high frequency and high power applications, which provide an …

In order to overcome interfacial delamination of pressureless sintered nanosilver as die
attachment on the ENIG finish, we tried to clarify the densification and interfacial diffusion …

Silicon carbide (SiC) devices have shown definite advantages over Si counterparts in high-
temperature, high-voltage, and high-frequency applications. To fully exploit the potentiality of …

We achieved robust bonding of a large area power chip (> 100 mm 2) with sintered Ag joint
produced by the electrical current assisted sintering (ECAS) technique operating at low …