Advances of RRAM devices: Resistive switching mechanisms, materials and bionic synaptic application
Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …
attention due to their enhanced properties such as fast operation speed, simple device …
CMOS-compatible neuromorphic devices for neuromorphic perception and computing: a review
Y Zhu, H Mao, Y Zhu, X Wang, C Fu, S Ke… - … Journal of Extreme …, 2023 - iopscience.iop.org
Neuromorphic computing is a brain-inspired computing paradigm that aims to construct
efficient, low-power, and adaptive computing systems by emulating the information …
efficient, low-power, and adaptive computing systems by emulating the information …
Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era
Growth of data eases the way to access the world but requires increasing amounts of energy
to store and process. Neuromorphic electronics has emerged in the last decade, inspired by …
to store and process. Neuromorphic electronics has emerged in the last decade, inspired by …
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
M Hellenbrand, J MacManus-Driscoll - Nano Convergence, 2023 - Springer
In the growing area of neuromorphic and in-memory computing, there are multiple reviews
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode
Atomic layer deposited (ALD) HfO2/Al2O3/HfO2 tri-layer resistive random access memory
(RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent …
(RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent …
Artificial synapses based on 2D-layered palladium diselenide heterostructure dynamic memristor for neuromorphic applications
The transformation of partially amorphous two-dimensional (2D) material layers represents a
promising avenue for enhancing the reliability of heterostructure memristor devices and …
promising avenue for enhancing the reliability of heterostructure memristor devices and …
Tunable voltage polarity-dependent resistive switching characteristics by interface energy barrier modulation in ceria-based bilayer memristors for neuromorphic …
Synaptic characteristics with tunable dependence on the voltage polarity are demonstrated
in ceria (CeO 2) and Gd-doped ceria (GDC) bilayer memristors with respect to their stacking …
in ceria (CeO 2) and Gd-doped ceria (GDC) bilayer memristors with respect to their stacking …
Resistive switching and synaptic characteristics in ZnO/TaON-based RRAM for neuromorphic system
I Oh, J Pyo, S Kim - Nanomaterials, 2022 - mdpi.com
We fabricated an ITO/ZnO/TaON/TaN device as nonvolatile memory (NVM) with resistive
switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is …
switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is …
Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode
In this work, a detailed improvement in the resistive switching behavior of Al-doped HfAlO-
based resistive random-access memory (RRAM) devices was studied by controlling the Al …
based resistive random-access memory (RRAM) devices was studied by controlling the Al …
Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy based memristor with embedded TaN nanoparticles
Atomic layer deposition technique has been used to prepare tantalum nitride nanoparticles
(TaN-NPs) and sandwiched between Al-doped HfO 2 layers to achieve ITO/HfAlO/TaN …
(TaN-NPs) and sandwiched between Al-doped HfO 2 layers to achieve ITO/HfAlO/TaN …