[HTML][HTML] Intrinsic photomixing detector based on amorphous silicon for envelope mixing of optical signals

M Müller, A Bablich, R Bornemann, N Marrenbach… - APL Photonics, 2023 - pubs.aip.org
In this work, a promising device for direct optical envelope mixing, the Intrinsic Photomixing
Detector (IPD) based on hydrogenated amorphous silicon, is reported. The IPD directly …

Flexible hybrid graphene/a-Si: H multispectral photodetectors

DS Schneider, A Bablich, MC Lemme - Nanoscale, 2017 - pubs.rsc.org
We report on the integration of large area CVD grown single-and bilayer graphene
transparent conductive electrodes (TCEs) on amorphous silicon multispectral …

High responsivity and ultra-low detection limits in nonlinear a-Si: H pin photodiodes enabled by photogating

A Bablich, M Müller, R Bornemann, A Nachtigal… - Photonic Sensors, 2023 - Springer
Photodetectors operating at the wavelength in the visible spectrum are key components in
high-performance optoelectronic systems. In this work, massive nonlinearities in amorphous …

Few-Layer MoS2/a-Si:H Heterojunction Pin-Photodiodes for Extended Infrared Detection

A Bablich, DS Schneider, P Kienitz, S Kataria… - ACS …, 2019 - ACS Publications
Few-layer molybdenum disulfide (FL-MoS2) films have been integrated into amorphous
silicon (a-Si: H) pin-photodetectors. To achieve this, vertical a-Si: H photodiodes were grown …

High-sensitivity focus-induced photoresponse in amorphous silicon photodiodes for enhanced three-dimensional imaging sensors

M Müller, A Bablich, P Kienitz, R Bornemann… - Physical Review …, 2022 - APS
In this work, we report on the bias-tunable and highly sensitive irradiance-dependent focus-
induced photoresponse (FIP) in amorphous silicon pin diodes for enhanced three …

Amorphous silicon intrinsic photomixing detector for optical ranging

A Bablich, M Müller, R Bornemann… - Communications …, 2023 - nature.com
Today's optical range finders or 3D imagers suffer from significant drawbacks and do not
allow to combine performance (sensitivity, precision) with simplicity, and scalability enabling …

Multi-exposure color imaging with stacked thin-film luminescent concentrators

A Koppelhuber, O Bimber - Optics Express, 2015 - opg.optica.org
We present a fully transparent, scalable, and flexible color image sensor that consists of
stacked thin-film luminescent concentrators (LCs). At each layer, it measures a Radon …

Varactor diodes of hydrogenated nanocrystalline Si with hydrogenated amorphous SiC prepared by PECVD

W Wei, Y Xiong, J Ding, Z Wang, C Yang, S Dai - Journal of Crystal Growth, 2023 - Elsevier
Hetero-structural barrier varactor diodes (HBVDs) can be widely used as variable
capacitors, frequency multipliers, parametric amplifiers, etc. in electronic systems. Herein, n …

Progress in a-Si: H based multispectral sensor technology and material recognition

DS Schneider, C Merfort, A Bablich - Sensors and Actuators A: Physical, 2015 - Elsevier
In this paper we describe the development of four different amorphous silicon based pi xn
multispectral photodetectors and discuss their optical characteristics as a result of extensive …

Highly-reflective and conductive distributed Bragg reflectors based on glancing angle deposited indium tin oxide thin films for silicon optoelectronic applications

SH Lee, JW Leem, XY Guan, JS Yu - Thin Solid Films, 2015 - Elsevier
We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-
based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a …