For integrated circuits (IC), as the technology node goes down to 20-14 nm, cobalt (Co)
replaces tantalum as a new barrier layer material. The polishing process of multilayer wiring …

With the development of ultra-large scale integrated circuits, ruthenium has been selected
as one of the most promising barrier metals for copper interconnects to replace traditional …

Copper interconnects for the sub-22 nm technology nodes are designed to have diffusion
barriers/liners of significantly reduced thickness and unconventional materials. The …

With the aggressive scaling of integrated circuits, ruthenium has been proposed as the next
generation barrier material to replace the conventional bilayer of tantalum and tantalum …

Defect-control is a critical requirement for chemical mechanical planarization (CMP) of the
ultrathin diffusion barriers considered for the new Cu-interconnects. The challenging task of …

The continuous miniaturization of the feature size of integrated circuit makes it crucial to find
proper barrier layer materials. With the properties of low resistivity (∼ 5.34 μΩ• cm) and …

Ruthenium (Ru) films deposited on either TiN or TaN/Ta have been proposed as a barrier
stack in advanced interconnects. Here, we investigated their polishing behavior using …

Chemical–mechanical planarization (CMP) is used to smoothen the topographies of a rough
surface by combining several functions of tribology (friction, lubrication), chemistry, and …

When the feature size of integrated circuit continues to shrink below 14 nm, ruthenium (Ru)
has become one of the most promising candidates for the application of novel barrier layer …

This paper focuses on the study of micro-galvanic corrosion of the Cu/Ru couple in KIO 4
solution. Practical nobility across the Cu/Ru interface was evaluated by Volta potential …