Oxide-based RRAM materials for neuromorphic computing

XL Hong, DJJ Loy, PA Dananjaya, F Tan… - Journal of materials …, 2018 - Springer
In this review, a comprehensive survey of different oxide-based resistive random-access
memories (RRAMs) for neuromorphic computing is provided. We begin with the history of …

Binary metal oxide-based resistive switching memory devices: A status review

AR Patil, TD Dongale, RK Kamat, KY Rajpure - Materials Today …, 2023 - Elsevier
Semiconductor memories are essential ingredients of modern electronic devices. Resistive
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …

Status and prospects of ZnO-based resistive switching memory devices

FM Simanjuntak, D Panda, KH Wei… - Nanoscale research letters, 2016 - Springer
In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …

Oxide-based resistive switching-based devices: fabrication, influence parameters and applications

R Khan, N Ilyas, MZM Shamim, MI Khan… - Journal of Materials …, 2021 - pubs.rsc.org
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …

Broadband optoelectronic synapse enables compact monolithic neuromorphic machine vision for information processing

T Guo, B Zhang, X Wang, Y Xiao, B Sun… - Advanced Functional …, 2023 - Wiley Online Library
Traditional machine vision is suffering from redundant sensing data, bulky structures, and
high energy consumption. Biological‐inspired neuromorphic systems are promising for …

Recent progress in optoelectronic memristors for neuromorphic and in-memory computation

ME Pereira, R Martins, E Fortunato… - Neuromorphic …, 2023 - iopscience.iop.org
Neuromorphic computing has been gaining momentum for the past decades and has been
appointed as the replacer of the outworn technology in conventional computing systems …

Effects of switching layer morphology on resistive switching behavior: A case study of electrochemically synthesized mixed-phase copper oxide memristive devices

SS Kundale, AP Patil, SL Patil, PB Patil, RK Kamat… - Applied Materials …, 2022 - Elsevier
Resistive switching (RS) behavior can serve as a building block in the development of non-
volatile memory and neuromorphic computing applications. Thus far, various device …

ZnO based resistive random access memory device: a prospective multifunctional next-generation memory

UB Isyaku, MHBM Khir, IM Nawi, MA Zakariya… - IEEE …, 2021 - ieeexplore.ieee.org
Numerous works that have demonstrated the study and enhancement of switching
properties of ZnO-based RRAM devices are discussed. Several native point defects that …

ZnO and ZnO-based materials as active layer in resistive random-access memory (RRAM)

E Nowak, E Chłopocka, M Szybowicz - Crystals, 2023 - mdpi.com
In this paper, an overview of the influence of various modifications on ZnO-based RRAM has
been conducted. Firstly, the motivation for creating new memory technology is presented …

A nonlinear resistive switching behaviors of Ni/HfO2/TiN memory structures for self-rectifying resistive switching memory

MJ Yun, D Lee, S Kim, C Wenger, HD Kim - Materials Characterization, 2021 - Elsevier
This work reports forming free/self-rectifying resistive switching characteristics and
dependency of the top electrode (TE) of a crystalline HfO 2-based resistive switching …