Oxide-based RRAM materials for neuromorphic computing
XL Hong, DJJ Loy, PA Dananjaya, F Tan… - Journal of materials …, 2018 - Springer
In this review, a comprehensive survey of different oxide-based resistive random-access
memories (RRAMs) for neuromorphic computing is provided. We begin with the history of …
memories (RRAMs) for neuromorphic computing is provided. We begin with the history of …
Binary metal oxide-based resistive switching memory devices: A status review
Semiconductor memories are essential ingredients of modern electronic devices. Resistive
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …
Status and prospects of ZnO-based resistive switching memory devices
In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …
alternative than the other metal oxides for its versatility and huge applications in different …
Oxide-based resistive switching-based devices: fabrication, influence parameters and applications
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …
memory (RRAM) has been considered an excellent scientific research interest in the areas …
Broadband optoelectronic synapse enables compact monolithic neuromorphic machine vision for information processing
Traditional machine vision is suffering from redundant sensing data, bulky structures, and
high energy consumption. Biological‐inspired neuromorphic systems are promising for …
high energy consumption. Biological‐inspired neuromorphic systems are promising for …
Recent progress in optoelectronic memristors for neuromorphic and in-memory computation
Neuromorphic computing has been gaining momentum for the past decades and has been
appointed as the replacer of the outworn technology in conventional computing systems …
appointed as the replacer of the outworn technology in conventional computing systems …
Effects of switching layer morphology on resistive switching behavior: A case study of electrochemically synthesized mixed-phase copper oxide memristive devices
Resistive switching (RS) behavior can serve as a building block in the development of non-
volatile memory and neuromorphic computing applications. Thus far, various device …
volatile memory and neuromorphic computing applications. Thus far, various device …
ZnO based resistive random access memory device: a prospective multifunctional next-generation memory
Numerous works that have demonstrated the study and enhancement of switching
properties of ZnO-based RRAM devices are discussed. Several native point defects that …
properties of ZnO-based RRAM devices are discussed. Several native point defects that …
ZnO and ZnO-based materials as active layer in resistive random-access memory (RRAM)
E Nowak, E Chłopocka, M Szybowicz - Crystals, 2023 - mdpi.com
In this paper, an overview of the influence of various modifications on ZnO-based RRAM has
been conducted. Firstly, the motivation for creating new memory technology is presented …
been conducted. Firstly, the motivation for creating new memory technology is presented …
A nonlinear resistive switching behaviors of Ni/HfO2/TiN memory structures for self-rectifying resistive switching memory
This work reports forming free/self-rectifying resistive switching characteristics and
dependency of the top electrode (TE) of a crystalline HfO 2-based resistive switching …
dependency of the top electrode (TE) of a crystalline HfO 2-based resistive switching …