Ammonium persulfate and potassium oleate containing silica dispersions for chemical mechanical polishing for cobalt interconnect applications
CK Ranaweera, NK Baradanahalli… - ECS Journal of Solid …, 2018 - iopscience.iop.org
We investigated the suitability of ammonium persulfate (APS) and potassium oleate (PO)
containing silica dispersions for polishing Co interconnects based on removal and …
containing silica dispersions for polishing Co interconnects based on removal and …
Post cleaning for FEOL CMP with silica and ceria slurries
WT Tseng, C Wu, T McCormack… - ECS Journal of Solid …, 2017 - iopscience.iop.org
Post cleaning experiments for front end of the line (FEOL) CMP with silica and ceria slurries
are carried out on commercial polishers with 300 mm oxide, nitride, and integrated shallow …
are carried out on commercial polishers with 300 mm oxide, nitride, and integrated shallow …
Fenton-like reaction between copper ions and hydrogen peroxide for high removal rate of tungsten in chemical mechanical planarization
K Kim, K Lee, S So, S Cho, M Lee, K You… - ECS Journal of Solid …, 2018 - iopscience.iop.org
The Fenton reaction has been used for the tungsten oxidation under acidic conditions in
tungsten chemical mechanical planarization (CMP). However, the narrow working pH …
tungsten chemical mechanical planarization (CMP). However, the narrow working pH …
Towards a deep understanding of oxidation in the material removal of GCr15 bearing steel during chemical mechanical polishing
G Xiao, L Jiang, W Peng, J Liu, C Deng, L Qian - Wear, 2022 - Elsevier
Oxidation is critical to metal chemical mechanical polishing (CMP). In this work, the role of
oxidation in the material removal of GCr15 bearing steel during CMP was thoroughly …
oxidation in the material removal of GCr15 bearing steel during CMP was thoroughly …
Control of tungsten protrusion with surface active agent during tungsten chemical mechanical polishing
With shrinkage of the minimum feature size to sub-14 nm, protrusion/dishing issues in
chemical mechanical planarization (CMP) processes have become increasingly important to …
chemical mechanical planarization (CMP) processes have become increasingly important to …
Communication—Selective Adsorption of PEG on SiO2 for High Removal Selectivity in Tungsten CMP
K Kim, K Lee, S So, S Cho, M Lee, K You… - ECS Journal of Solid …, 2018 - iopscience.iop.org
We studied the effect of selective adsorption of polyethylene glycol (PEG) on SiO 2 for high
removal selectivity of tungsten to SiO 2 in tungsten CMP. The hydrogen bonding between …
removal selectivity of tungsten to SiO 2 in tungsten CMP. The hydrogen bonding between …
Chemical Mechanical Polishing of Cobalt and Post-CMP Cleaning of Silica and Ceria Particles
CKRA Gamaralalage - 2021 - search.proquest.com
Chemical mechanical planarization (CMP) is the only process capable of achieving global
planarization for both dielectric structures and metal interconnects that are integral parts of …
planarization for both dielectric structures and metal interconnects that are integral parts of …