Silicon is the undisputed leader for microelectronics among all the industrial materials and
Si nanostructures flourish as natural candidates for tomorrow's technologies due to the rising …

This work reviews the up-to-now developed formaldehyde conductometric gas sensors.
First, the different methods employed to fabricate the sensing films are explained. They are …

One-dimensional semiconductor nanostructures have been studied in great depth over the
past number of decades as potential building blocks in electronic, thermoelectric …

This review reports on a new process for the synthesis of Si nanowires (NWs), based on the
wet etching of Si substrates assisted by a thin metal film. The approach exploits the …

Silicon nanowires (Si NWs) are emerging as an innovative building block in several fields,
such as microelectronics, energetics, photonics, and sensing. The interest in Si NWs is …

Ge nanowires exhibit wide application potential in the fields of nanoscale devices due to
their excellently optical and electrical properties. This article reviews the recent progress and …

In this paper, we present the realization by a low cost approach compatible with silicon
technology of new nanostructures, characterized by the presence of different materials, such …

One of the challenges in the development of germanium nanowires (Ge NWs) is to increase
their length beyond the 10 μm limit without enlarging the NW diameter, ie minimizing the …

For the first time, high quality tin oxide (SnO2) nanowires have been synthesized at a low
substrate temperature of 450° C via vapor–liquid–solid mechanism using an electron beam …

We report the self catalytic growth of Sn-doped indium oxide (ITO) nanowires (NWs) over a
large area glass and silicon substrates by electron beam evaporation method at low …