Recently, piezoelectric thin films including zinc oxide (ZnO) and aluminium nitride (AlN)
have found a broad range of lab-on-chip applications such as biosensing, particle/cell …

We summarize the recipes and describe the role of sputtering parameters in producing
highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is …

This paper discusses piezoelectric acoustic devices based on widely used piezoelectric
materials. Commonly used piezoelectric thin film deposition techniques and the influence of …

Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different
substrates. The crystallographic properties of layered film structures consisting of a …

The improvement mechanism of sputtered AlN films by high temperature annealing in
nitrogen ambient has been investigated. Sputtered AlN films were annealed at 1100–1700° …

The emerging antimony chalcogenide (Sb2 (SxSe1− x) 3, 0≤ x≤ 1) semiconductors are
featured as quasi‐1D structures comprising (Sb4S (e) 6) n ribbons, this structural …

A series of AlN films were deposited on (100) silicon substrate at room temperature with
varying deposition conditions, ie, nitrogen concentration in sputtering gases (N2/(N2+ Ar)) …

The authors report upon the ultrafast bipolar switching characteristics observed in aluminum
nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset …

In this study, AlCrN films were deposited from Al 70 Cr 30 alloy targets by high-power
impulse magnetron sputtering (HiPIMS). The structural characteristics of the AlCrN films …

Surface roughness seriously affects the electromagnetic performance of capacitive radio
frequency (RF) micro-electromechanical system (MEMS) switches. This review presents the …