Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications
As Moore's law is gradually losing its effectiveness, the development of alternative high-
speed and low-energy–consuming information technology with postsilicon-advanced …
speed and low-energy–consuming information technology with postsilicon-advanced …
Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate
High‐quality epitaxy consisting of Al1− xGaxN/Al1− yGayN multiple quantum wells (MQWs)
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD
Precise control of the heteroepitaxy on a low-cost foreign substrate is often the key to drive
the success of fabricating semiconductor devices in scale when a large low-cost native …
the success of fabricating semiconductor devices in scale when a large low-cost native …
AlGaN deep-ultraviolet light-emitting diodes grown on SiC substrates
The disinfection industry would greatly benefit from efficient, robust, high-power deep-
ultraviolet light-emitting diodes (UV–C LEDs). However, the performance of UV–C AlGaN …
ultraviolet light-emitting diodes (UV–C LEDs). However, the performance of UV–C AlGaN …
Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier
AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) still suffer from poor
quantum efficiency and low optical power. In this work, we proposed a DUV LED structure …
quantum efficiency and low optical power. In this work, we proposed a DUV LED structure …
Surface-passivated AlGaN nanowires for enhanced luminescence of ultraviolet light emitting diodes
Spontaneously grown, self-aligned AlGaN nanowire ultraviolet light emitting diodes still
suffer from low efficiency partially because of the strong surface recombination caused by …
suffer from low efficiency partially because of the strong surface recombination caused by …
Enhanced performance of an AlGaN-based deep-ultraviolet LED having graded quantum well structure
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) suffer from severe quantum
confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) …
confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) …