The dispersion stability of alumina suspensions is an obstacle to its large-scale application
for chemical mechanical polishing (CMP) since the aggregation of particles will cause …

Chemical-mechanical polishing (CMP) of copper was conducted in two acidic (pH 1.3 and
3.8) slurries and one alkaline pH (10∼ 12) slurry with alumina particles as the abrasives. In …

Chemical–mechanical planarization (CMP) of copper is a vital process to produce sub-
micron range and multilevel metallization to meet the demands of the current interconnect …

This study compares the oxidative dissolution, passivation, and polishing behavior of copper
chemical–mechanical polishing in the presence of hydrogen peroxide, glycine, and copper …

Chemical–mechanical polishing (CMP) of thin copper films in ammonia-containing slurries
has been investigated. The copper film polish rate, measured in a Strausbaugh 6CA …

Copper dissolution in ammonia-containing media during chemical-mechanical polishing
(CMP) was investigated. Both a stationary and a rotating disk electrode (RDE) were used for …

Chemical mechanical polishing of copper was performed using as oxidizer and alumina
particles as abrasives. Electrochemical techniques were used to investigate the …

Investigations were carried out to understand the effect of hydrogen peroxide as an oxidant
and benzotriazole (BTA) as an inhibitor on the chemical mechanical planarization (CMP) of …

Chemical–mechanical planarization (CMP) is a vital process for the fabrication of advanced
copper multilevel interconnects schemes. The focus of this investigation was to understand …

This study demonstrates the effect of surfactant and electrolyte on the colloidal stability of a
KMnO 4/Al 2 O 3 suspension and their subsequent effects on the material removal rate …