[HTML][HTML] A review of high magnetic moment thin films for microscale and nanotechnology applications

G Scheunert, O Heinonen, R Hardeman… - Applied Physics …, 2016 - pubs.aip.org
The creation of large magnetic fields is a necessary component in many technologies,
ranging from magnetic resonance imaging, electric motors and generators, and magnetic …

Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths

A Bonanni - Semiconductor Science and Technology, 2007 - iopscience.iop.org
This review summarizes the state-of-the-art in the search for room temperature
ferromagnetic semiconductors based on transition-metal-and rare-earth-doped nitrides. The …

Ferromagnetism in GaN: Gd: a density functional theory study

L Liu, PY Yu, Z Ma, SS Mao - Physical Review Letters, 2008 - APS
First-principle calculations of the electronic structure and magnetic interaction of GaN: Gd
have been performed within the generalized gradient approximation (GGA) of the density …

Tunable emission property of biotin capped Gd: ZnS nanoparticles and their antibacterial activity

GA Kumar, HSB Naik, R Viswanath, IKS Gowda… - Materials Science in …, 2017 - Elsevier
Gd doped ZnS nanoparticles have been successfully fabricated by a microwave irradiation
method whose surface was passivated with biotin at different concentration. The structural …

Gd-doped SnO2 nanoparticles: Structure and magnetism

R Adhikari, AK Das, D Karmakar, J Ghatak - Journal of magnetism and …, 2010 - Elsevier
Gd-doped SnO2 nanoparticles were chemically prepared doping 0–12.5% Gd into SnO2
and calcined at 600° C. X-ray diffraction and Fourier transformed infrared spectroscopy …

Ferromagnetism and its stability in n-type Gd-doped GaN: First-principles calculation

Z Liu, X Yi, J Wang, J Kang, AG Melton, Y Shi… - Applied Physics …, 2012 - pubs.aip.org
In this work, effects of interstitial oxygen on the ferromagnetism in Gd-doped GaN system
were investigated via first principles, including both total energy and band structure …

Systematic study of the exchange interactions in Gd-doped GaN containing N interstitials, O interstitials, or Ga vacancies

A Thiess, S Blügel, PH Dederichs, R Zeller… - Physical Review B, 2015 - APS
Using large supercells models and the KKRnano multiple scattering approach, statistically
meaningful information is obtained on the distribution of local densities of states, magnetic …

On the magnetic properties of Gd implanted GaN

J Hejtmánek, K Knížek, M Maryško, Z Jirák… - Journal of applied …, 2008 - pubs.aip.org
The wurzite type gallium nitride doped by gadolinium, Ga 1− x Gd x N (x∼ 0.01–0.07)⁠, was
prepared by Gd ion implantation of the parent GaN thin films deposited on sapphire …

Gadolinium-implanted GaN studied by spin-polarized positron annihilation spectroscopy

M Maekawa, A Miyashita, S Sakai, A Kawasuso - Physical Review B, 2020 - APS
In this study, Gd ion implantation and annealing were performed at 900∘ C for nominally
undoped wurtzite GaN grown by metal-organic chemical vapor deposition. Spin-polarized …

Investigations on structural and optical properties of Zn1− xGdxS nanoparticles

A Divya, KS Kumar, PS Reddy - Applied surface science, 2011 - Elsevier
Zn1− xGdxS (x= 0.00, 0.02 and 0.04) nanoparticles were synthesized by facile chemical co-
precipitation method using PVP as a surfactant. ZnS nanoparticles could be doped with Gd …