An electronic silicon-based memristor with a high switching uniformity
Metal–insulator–metal devices known as memristors offer voltage-regulated nanoscale
conductivity and are of interest in the development of non-volatile random access memory …
conductivity and are of interest in the development of non-volatile random access memory …
Low-temperature characteristics of magnesium fluoride based bipolar RRAM devices
This study investigates the temperature-independent switching characteristics of magnesium
fluoride (MgFx) based bipolar resistive memory devices at temperatures ranging from 300 K …
fluoride (MgFx) based bipolar resistive memory devices at temperatures ranging from 300 K …
Scalability of voltage-controlled filamentary and nanometallic resistance memory devices
Much effort has been devoted to device and materials engineering to realize nanoscale
resistance random access memory (RRAM) for practical applications, but a rational physical …
resistance random access memory (RRAM) for practical applications, but a rational physical …
DC electrical degradation of YSZ: voltage‐controlled electrical metallization of a fast ion conducting insulator
DC electrical degradation as a form of dielectric and resistance breakdown is common in
thin‐film devices including resistance‐switching memory. To obtain design data and to …
thin‐film devices including resistance‐switching memory. To obtain design data and to …
Purely electronic nanometallic resistance switching random-access memory
Resistance switching random-access memory (ReRAM), with the ability to repeatedly
modulate electrical resistance, has been highlighted as a feasible high-density memory with …
modulate electrical resistance, has been highlighted as a feasible high-density memory with …
Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride
Electroforming-free resistive switching random access memory (RRAM) devices employing
magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming …
magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming …
DC resistance degradation of SrTiO3: The role of virtual‐cathode needles and oxygen bubbles
This study of highly accelerated lifetime tests of SrTiO3, a model semiconducting oxide, is
motivated by the interest in reliable multilayer ceramic capacitors and resistance‐switching …
motivated by the interest in reliable multilayer ceramic capacitors and resistance‐switching …
[HTML][HTML] Probing material conductivity in two-terminal devices by resistance difference
It is generally impossible in two-terminal devices to separate the resistance of the device
material from the parasitic resistance of terminals, interfaces, and serial loads, yet such …
material from the parasitic resistance of terminals, interfaces, and serial loads, yet such …
[图书][B] Quantum Electronic Interference in Nano Amorphous Silicon and Other Thin Film Resistance Memory
Y Lu - 2017 - search.proquest.com
This thesis describes conductivity in amorphous semiconductors and insulators—some
doped with metals, in which elastic electrons can random walk across a transport length of …
doped with metals, in which elastic electrons can random walk across a transport length of …
A Si-memristor electronically and uniformly switched by a constant voltage
Amorphous insulators have localized wave functions that decay with the distance $ r $
following exp ($-r/\zeta $). Since nanoscale conduction is not excluded at $ r<\zeta $, one …
following exp ($-r/\zeta $). Since nanoscale conduction is not excluded at $ r<\zeta $, one …