As-prepared nanostructured semiconductor materials are usually found in an amorphous
form, which needs to be converted into a crystalline one for improving electronic properties …

The gas jet deposition (GJD) technique is a very promising method for synthesis of
nanostructured films allowing fabrication of uniform thin layers over large areas with high …

The kinetics of gold-induced crystallization (AuIC) of amorphous silicon suboxide (a-SiO x,
x= 0.2) films in the layer exchange mode was detailed studied by variation of the annealing …

Polycrystalline silicon (poly-Si) films were fabricated by gold-induced crystallization (AuIC) of
amorphous silicon suboxide (a-SiO x, x= 0.2) films at temperatures of 210–275° C. The films …

In this study, we successfully obtained crystalline silicon from silica powder using a metal-
induced crystallization method. For this purpose, powders were first prepared from …

High-quality polycrystalline silicon films on low-cost and low-temperature substrates have
attracted much attention as promising materials for high-speed thin-film transistors and thin …

The growth of a low-temperature polycrystalline silicon (LTPS) thin film on a flexible
polyethylene terephthalate (PET) substrate under the assistance of helium plasma has been …

The development of low-temperature piezoresistive materials provides compatibility with
standard silicon-based MEMS fabrication processes. Additionally, it enables the use of such …

In this study, electric field-enhanced aluminum-induced crystallization (AIC) of amorphous
silicon (a-Si) thin films was investigated considering various current densities. Constant …

The phase composition, structure, and size of particles and agglomerates formed by
annealing of the powder obtained from hydrophobizing organosilicon liquid in the presence …