The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …

In this paper, an extensive review of the most up-to-date papers on microwave Doherty
power amplifiers is presented. The main applications are discussed, together with the …

The work has presented duobinary modulation and predistortion techniques for the radio
over fiber system enhancement for achieving security level. Duobinary modulation …

GaN integrated circuit technologies have dramatically progressed over the recent years. The
prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output …

The next generation wireless network, 5G, is expected to provide ubiquitous connections to
billions of devices as well as to unlock many new services through multigigabit-per-second …

This article presents a broadband fully integrated Doherty power amplifier (DPA) using a
continuous-mode combining load. It is illustrated that the continuous-mode impedance …

An analytical load—pull-based design methodology for three-stage Doherty power
amplifiers (PAs) is presented and demonstrated. A compact output combiner network …

<? Pub Dtl=""?> This paper presents a linear multi-harmonic analysis method to evaluate the
performance of digitally controlled dual RF-input power amplifiers (PAs). The method …

A balanced-to-Doherty (B2D) mode-reconfigurable power amplifier (PA) is presented in this
article, which is endowed with a unique capability of maintaining high linearity and high …

Post-matching network (PMN) dominates broadband Doherty power amplifier (DPA) design,
but at the cost of large footprint. This brief presents a PMN-free, compact and broadband …