This work investigates the impact of different types of interface trap charges (ITCs) on
electrical parameters of split source horizontal pocket Z shape TFET (ZHP-TFET) and Hetero …

A detailed analysis of low frequency noise behavior of two different vertical TFETs namely
n​+​ pocket VTFET and dual MOS capacitor (D-MOS) VTFET is presented in this work …

This work analyses the reliability issues of vertically extended drain double gate Si 1− x Ge x
source tunnel FET on the basis of temperature effect and interface charge effects. The …

This paper reports on a comparative study of the analysis of electrical noise of
heterojunction tunnelling-field-effect-transistors with an L-shaped gate (LTFET) and with a T …

Recent trend researches provide potential results of tunnel field effect transistors (TFETs) for
being used in many electronic circuit applications. This work studies the comparative …

An extraction method of the interface-trap densities (Dit) of the stacked bonding structure in
3D integration using high-frequency capacitance–voltage technique is proposed. First, an …

This work reports the fundamental concepts on n+ pocket Vertical Tunnel FET (VTFET). An
optimization strategy that is applicable to any TFET geometry is presented to optimize its …

This chapter presents the vertical tunnel field-effect transistor (V-TFET) with dual metal oxide
semiconductor capacitor (MOSCAP) geometry and analyses of various aspects related to it …