Band parameters for III–V compound semiconductors and their alloys
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …
established commercial technologies, as well as new cutting-edge classes of electronic and …
[图书][B] Semiconductor materials
LI Berger - 2020 - taylorfrancis.com
Semiconductor Materials presents physico-chemical, electronic, electrical, elastic,
mechanical, magnetic, optical, and other properties of a vast group of elemental, binary, and …
mechanical, magnetic, optical, and other properties of a vast group of elemental, binary, and …
Energy levels of direct excitons in semiconductors with degenerate bands
A Baldereschi, NC Lipari - Physical Review B, 1971 - APS
A new method to investigate the direct-exciton spectrum in semiconductors with degenerate
bands is described. This method, which sloves the effective-mass Hamiltonian using …
bands is described. This method, which sloves the effective-mass Hamiltonian using …
[图书][B] Semiconductor alloys: physics and materials engineering
AB Chen, A Sher - 1995 - books.google.com
In the first comprehensive treatment of these technologically important materials, the authors
provide theories linking the properties of semiconductor alloys to their constituent …
provide theories linking the properties of semiconductor alloys to their constituent …
Electronic impurity levels in semiconductors
F Bassani, G Iadonisi, B Preziosi - Reports on Progress in Physics, 1974 - iopscience.iop.org
The theory of the electronic states of crystals containing point defects in small concentration
is reviewed and its application to the case of semiconductors is discussed. The basic …
is reviewed and its application to the case of semiconductors is discussed. The basic …
Excitonic exchange splitting in bulk semiconductors
We present an approach to calculate the excitonic fine-structure splittings due to electron-
hole short-range exchange interactions using the local-density approximation …
hole short-range exchange interactions using the local-density approximation …
Temperature dependence of the dielectric function and the interband critical points of InSb
S Logothetidis, L Via, M Cardona - Physical Review B, 1985 - APS
Measurements performed with a rotating-analyzer ellipsometer have been used to
determine the dielectric function of undoped InSb between 1.2 and 5.6 eV in the temperature …
determine the dielectric function of undoped InSb between 1.2 and 5.6 eV in the temperature …
Infrared cyclotron resonance and related experiments in the conduction band of InSb
EJ Johnson, DH Dickey - Physical Review B, 1970 - APS
We present a comprehensive study of the conduction band of InSb. Experimental
observations of fundamental cyclotron-resonance transitions involving the lowest Landau …
observations of fundamental cyclotron-resonance transitions involving the lowest Landau …
[图书][B] Excitons: their properties and uses
DC Reynolds - 2012 - books.google.com
Excitons: Their Properties and Uses presents the fundamental properties of excitons and
emphasizes the extensive use of excitons as a tool in understanding the properties of …
emphasizes the extensive use of excitons as a tool in understanding the properties of …
Landau level spectroscopy
G Landwehr, EI Rashba - 2012 - books.google.com
Modern Problems in Condensed Matter Sciences, Volume 27.2: Landau Level Spectroscopy
focuses on the processes, reactions, methodologies, and approaches involved in …
focuses on the processes, reactions, methodologies, and approaches involved in …