This paper provides an overview of research developments toward nanometer-scale
electronic switching devices for use in building ultra-densely integrated electronic …

In this paper, we discuss logic circuit designs using the circuit model of three-state quantum
dot gate field effect transistors (QDGFETs). QDGFETs produce one intermediate state …

A transistor device having a graphene base for the transport of electrons into a collector is
provided. The transistor consists of a heterostructure comprising an electron emitter, an …

A transistor operated by changing the electrostatic potential of an island disposed between
two tunnel junctions. The transistor has an island of material which has a band gap (eg …

An epitaxial stack (10) is provided that allows integra tion of both vertical and horizontal
quantum effect devices. Epitaxial stack (10) allows fabrication of both quantum well resonant …

This paper reviews research developments aimed at the design of electronic computers that
contain components with dimensions of only a few nanometers. A nanometer, one billionth …

This paper presents the three-state behavior of quantum dot gate field-effect transistors
(FETs). GeO x-cladded Ge quantum dots (QDs) are site-specifically self-assembled over …

A new quantum device simulation technology has been developed based on the statistical
density matrix theory. By introducing the Hartree self-consistent-field model for electron …

Single electron transistors (SETs) have ultra-small size, ultra-low power dissipation and
unique Coulomb blockade oscillation characteristics which make them promising …

This paper presents the fabrication of a negative-channel metal–oxide–semiconductor
(NMOS) inverter based on quantum dot gate field-effect transistors (QDG-FETs). A QDG-FET …