Ballistic electron transport is a key requirement for existence of a topological phase
transition in proximitized InSb nanowires. However, measurements of quantized …

We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum
dots by taking advantage of their strong electronic confinement. The electrical conductance …

III-V semiconductor nanowires have attracted intensive research interest because of their
promising optical and electronic properties that can be manipulated by tailoring nanowire …

At the cutting‐edge of microwave detection technology, novel approaches which exploit the
interaction between microwaves and quantum devices are rising. In this study, microwaves …

We investigate the nonlocal thermoelectric transport in a Cooper-pair splitter based on a
double-quantum-dot-superconductor three-terminal hybrid structure. We find that the …

Here, the operation of a field‐effect transistor based on a single InAs nanowire gated by an
ionic liquid is reported. Liquid gating yields very efficient carrier modulation with a …

The superconducting proximity effect has recently attracted a renewed interest as the basis
of topologically nontrivial states in materials with a large spin–orbit interaction, with …

We use k· p theory to estimate the Rashba spin-orbit coupling (SOC) in large semiconductor
nanowires. We specifically investigate GaAs-and InSb-based devices with different gate …

Stark effect, the electric-field analogue of magnetic Zeeman effect, is one of the celebrated
phenomena in modern physics and appealing for emergent applications in electronics …

The possibility to expand the range of material combinations in defect-free heterostructures
is one of the main motivations for the great interest in semiconductor nanowires. However …