In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide
(SiC) has witnessed many advances, giving rise to electronic devices widely used in high …

Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence
are ideal platforms for quantum communications and distributed quantum computations. In …

In the past decade, color centers in silicon carbide (SiC) have emerged as promising
platforms for various quantum information technologies. There are three main types of color …

Silicon carbide (SiC) is an indirect wide band gap semiconductor that is utilized in many
industrial applications due to its extreme physical properties. SiC nanoparticles (NPs) exhibit …

Silicon carbide is an emerging platform for quantum technologies that provides wafer scale
and low-cost industrial fabrication. The material also hosts high-quality defects with long …

Silicon carbide (SiC) has become a key player in the realization of scalable quantum
technologies due to its ability to host optically addressable spin qubits and wafer-size …

Spin defects in silicon carbide appear to be a promising tool for various quantum
technologies, especially for quantum sensing. However, this technique has been used only …

The nitrogen-vacancy (NV) centers (NCV Si)− in 4H silicon carbide (SiC) constitute an
ensemble of spin S= 1 solid state qubits interacting with the surrounding 14 N and 29 Si …

The nitrogen-vacancy (NV) center in 3 C-SiC, the analog of the NV center in diamond, has
recently emerged as a solid-state qubit with competitive properties and significant …

Robust single spin color centers in solid state systems with telecom wavelength emission
are vital to quantum photonics and quantum networks. The nitrogen vacancy (NV) centers in …