2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges

PV Pham, SC Bodepudi, K Shehzad, Y Liu, Y Xu… - Chemical …, 2022 - ACS Publications
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

Promises and prospects of two-dimensional transistors

Y Liu, X Duan, HJ Shin, S Park, Y Huang, X Duan - Nature, 2021 - nature.com
Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …

Two-dimensional materials for next-generation computing technologies

C Liu, H Chen, S Wang, Q Liu, YG Jiang… - Nature …, 2020 - nature.com
Rapid digital technology advancement has resulted in a tremendous increase in computing
tasks imposing stringent energy efficiency and area efficiency requirements on next …

Hexagonal boron nitride for next‐generation photonics and electronics

S Moon, J Kim, J Park, S Im, J Kim, I Hwang… - Advanced …, 2023 - Wiley Online Library
Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted
tremendous interest motivated by the extraordinary properties it shows across the fields of …

2D materials for spintronic devices

EC Ahn - npj 2D Materials and Applications, 2020 - nature.com
Abstract 2D materials are attractive for nanoelectronics due to their ultimate thickness
dimension and unique physical properties. A wide variety of emerging spintronic device …

Van der Waals heterostructures for high‐performance device applications: challenges and opportunities

SJ Liang, B Cheng, X Cui, F Miao - Advanced Materials, 2020 - Wiley Online Library
The discovery of two‐dimensional (2D) materials with unique electronic, superior
optoelectronic, or intrinsic magnetic order has triggered worldwide interest in the fields of …

Scalable energy-efficient magnetoelectric spin–orbit logic

S Manipatruni, DE Nikonov, CC Lin, TA Gosavi, H Liu… - Nature, 2019 - nature.com
Since the early 1980s, most electronics have relied on the use of complementary metal–
oxide–semiconductor (CMOS) transistors. However, the principles of CMOS operation …

Sub-10 nm two-dimensional transistors: Theory and experiment

R Quhe, L Xu, S Liu, C Yang, Y Wang, H Li, J Yang… - Physics Reports, 2021 - Elsevier
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Low-dimensional nanostructures for monolithic 3D-integrated flexible and stretchable electronics

Q Hua, G Shen - Chemical Society Reviews, 2024 - pubs.rsc.org
Flexible/stretchable electronics, which are characterized by their ultrathin design, lightweight
structure, and excellent mechanical robustness and conformability, have garnered …

Semiconductor quantum dots for memories and neuromorphic computing systems

Z Lv, Y Wang, J Chen, J Wang, Y Zhou… - Chemical reviews, 2020 - ACS Publications
The continued growth in the demand of data storage and processing has spurred the
development of high-performance storage technologies and brain-inspired neuromorphic …