Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review
Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …
development of solar blind photodetectors and power electronic devices which are …
β-Ga2O3-Based Power Devices: A Concise Review
Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …
generation wide bandgap semiconductor, owing to its natural physical and chemical …
Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation
Currently, a significant portion (~ 50%) of global warming emissions, such as CO2, are
related to energy production and transportation. As most energy usage will be electrical (as …
related to energy production and transportation. As most energy usage will be electrical (as …
A state-of-art review on gallium oxide field-effect transistors
As a promising ultra-wide bandgap (UWBG) semiconductor, gallium oxide (Ga 2 O 3) has
recently aroused increasing attention in the area for high-power electronics, power switch for …
recently aroused increasing attention in the area for high-power electronics, power switch for …
Band alignment of h-BN/β-Ga2O3 heterostructure grown via ion beam sputtering deposition
J Chen, J Meng, Y Cheng, Y Shi, G Wang… - Applied Surface …, 2022 - Elsevier
Integrating two-dimensional ultra-wide band gap hexagonal boron nitride (h-BN) on β-Ga 2
O 3 surface into van der Waals heterostructures is of great interest for developing novel high …
O 3 surface into van der Waals heterostructures is of great interest for developing novel high …
Investigation of AlGaN Channel HEMTs on β-Ga2O3 Substrate for High-Power Electronics
The wider bandgap AlGaN (Eg> 3.4 eV) channel-based high electron mobility transistors
(HEMTs) are more effective for high voltage operation. High critical electric field and high …
(HEMTs) are more effective for high voltage operation. High critical electric field and high …
High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: a simulation study
C Sivamani, P Murugapandiyan, A Mohanbabu… - Microelectronics …, 2023 - Elsevier
We report high-performance E-mode HEMT with ultra-wide bandgap β-Ga 2 O 3 buffer using
numerical simulation. The proposed normally-off HEMT showed high breakdown …
numerical simulation. The proposed normally-off HEMT showed high breakdown …
An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure
M Ge, Y Li, Y Zhu, D Chen, Z Wang, S Tan - Journal of Applied Physics, 2021 - pubs.aip.org
To improve the performance of the conventional p-GaN gate AlGaN/GaN high electron
mobility transistors (HEMTs), we propose an improved design for e-mode AlGaN/GaN HEMT …
mobility transistors (HEMTs), we propose an improved design for e-mode AlGaN/GaN HEMT …
Epitaxial growth of β-Ga 2 O 3 (− 201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations
β-Ga2O3 is a wide bandgap semiconductor material that is promising for many fields such
as gas sensors, UV detectors, and high-power electronics. Until now, most epitaxial β …
as gas sensors, UV detectors, and high-power electronics. Until now, most epitaxial β …
High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer
We report high-quality Ga 2 O 3 grown on an AlGaN/AlN/Sapphire in a single growth run in
the same Metal Organic Chemical Vapor Deposition reactor with an AlO x interlayer at the …
the same Metal Organic Chemical Vapor Deposition reactor with an AlO x interlayer at the …