Advanced Packaging Technology of GaN HEMTs Module for High-power and High-frequency Applications: A Review
M Wang, P Gao, F Shi, W Hu, X Wang… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great
potential for high-power, high-temperature, and high-frequency applications. However, it is …
potential for high-power, high-temperature, and high-frequency applications. However, it is …
Gallium-nitride (gan) transistor design for transient-overload power applications
Gallium-nitride (GaN) transistors offer unparal-leled switching speed for power electronics,
eg, for high-frequency applications or drastically reducing magnetics. Of par-ticular …
eg, for high-frequency applications or drastically reducing magnetics. Of par-ticular …
Thermal boundary analysis for high-power-density gan-based chargers
GaN-based AC/DC chargers for consumer electronics are becoming the standard. Their
popularity is due to a 50% reduction in size and weight. Accompanying the reduction in size …
popularity is due to a 50% reduction in size and weight. Accompanying the reduction in size …