Dielectric modulated GaAs1− x Sb X FinFET as a label-free biosensor: Device proposal and investigation
In this paper, we propose and investigate a dielectric modulated (DM) GaAs 1− x Sb x
FinFET as a label-free biosensor. Raised source drain (RSD) architecture is employed in the …
FinFET as a label-free biosensor. Raised source drain (RSD) architecture is employed in the …
Performance analysis of ITCs on analog/RF, linearity and reliability performance metrics of tunnel FET with ultra-thin source region
The generation and accumulation of trap charges at oxide-semiconductor contact is a crucial
point to consider since it affects device performance and reliability. This paper aimed to …
point to consider since it affects device performance and reliability. This paper aimed to …
Role of Hole-Selective Contact in Efficiency Improvement of ITO-Free InP/MoO3/ PEDOT:PSS Nanowire Solar Cells
SK Agnihotri, DP Samajdar… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
The use of nanostructures over traditional bulk and thin-film solar cells (SCs) increases the
efficiency per unit volume due to the coupled effects of intrinsic antireflection and strong …
efficiency per unit volume due to the coupled effects of intrinsic antireflection and strong …
Design principles of 22-nm SOI LDD-FinFETs for ultra-low-power analog circuits
In this article, analog/radio frequency (RF) performance metrics along with linearity analysis
of a silicon-on-insulator lightly doped drain (LDD)-finFET are investigated through 3D TCAD …
of a silicon-on-insulator lightly doped drain (LDD)-finFET are investigated through 3D TCAD …
Performance analysis of III-V and IV semiconductors based double gate hetero material negative capacitance TFET
In this paper, a combination of ferroelectric (FE) HfZrO2 and dielectric (DE) SiO2 is used to
generate negative capacitance (NC) effects in Hetero Material (HM) tunnel FETs (TFETs) …
generate negative capacitance (NC) effects in Hetero Material (HM) tunnel FETs (TFETs) …
Impact of the mole fraction modulation on the RF/DC performance of GaAs1−xSbx FinFET
The impact of mole fraction variation on the RF/DC performance of GaAs1− x Sb x‐based
FinFET has been examined in this study. Changing the Sb mole fraction has substantial …
FinFET has been examined in this study. Changing the Sb mole fraction has substantial …
Performance Evolution of the GaAs1-xSbx FinFET for the Mole Fraction Variation
In this paper, impact of the mole fraction variation in device performance of III-V material
based GaAs 1-x Sb x-FinFET has been investigated. Mole fraction variability influence the …
based GaAs 1-x Sb x-FinFET has been investigated. Mole fraction variability influence the …
22 nm LDD FinFET Based Novel Mixed Signal Application: Design and Investigation
In this paper, a sigma-delta (Ʃ Δ) analog to digital converter (ADC) has been designed and
circuit performance metrics have been investigated using 22 nm silicon on insulator (SOI) …
circuit performance metrics have been investigated using 22 nm silicon on insulator (SOI) …
Performance comparison of III–V and silicon FinFETs for ultra-low power VLSI applications
In this paper, the device performance of a three-dimensional (3D) FinFET is investigated and
a suitable comparison is performed by employing conventional Silicon and III-V materials …
a suitable comparison is performed by employing conventional Silicon and III-V materials …
Demonstration of Geometrical Impact of Nanowire on GaAs1–xSbx Transistor Performance
In this article, we demonstrate the impact of nanowire geometry of GaAs 1–x Sb x transistor.
Circular, square, and triangular gate-all-around (GAA) geometries are taken to investigate …
Circular, square, and triangular gate-all-around (GAA) geometries are taken to investigate …