Room temperature single-photon emission from InGaN quantum dot ordered arrays in GaN nanoneedles
PK Saha, KS Rana, N Thakur, B Parvez… - Applied Physics …, 2022 - pubs.aip.org
GaN-based single-photon sources have received immense attention for applications in
quantum technologies. An isolated semiconductor quantum dot (QD) is an attractive and …
quantum technologies. An isolated semiconductor quantum dot (QD) is an attractive and …
Site-controlled growth of In (Ga) As/GaAs quantum dots on patterned substrate
X Zhao, W Liu, Y Bao, X Chen, C Ji, G Yang… - …, 2024 - iopscience.iop.org
Abstract In (Ga) As quantum dot (QD) with uniform size and controlled sites have great
potential in optical communications and quantum computing. In this review, we focus on the …
potential in optical communications and quantum computing. In this review, we focus on the …
Reduced auger coefficient through efficient carrier capture and improved radiative efficiency from the broadband optical cavity: a mechanism for potential droop …
Efficiency droop at high carrier-injection regimes is a matter of concern in InGaN/GaN
quantum-confined heterostructure-based light-emitting diodes (LEDs). Processes such as …
quantum-confined heterostructure-based light-emitting diodes (LEDs). Processes such as …
Carrier recovery from sub-bandgap states in a gan-based quantum-confined structure: Identification of carrier reservoirs through femtosecond pump-probe …
T Aggarwal, S Ganguly, D Saha - The Journal of Physical …, 2021 - ACS Publications
GaN-based quantum-confined structures with an optical cavity are frequently used for solid-
state light sources. The confined active and barrier regions of the structures consist of low …
state light sources. The confined active and barrier regions of the structures consist of low …
Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy
GaN‐based optoelectronic devices including light‐emitting diodes and lasers realized with
quantum‐confined nanostructures, revolutionized the solid‐state lighting. Excited‐state …
quantum‐confined nanostructures, revolutionized the solid‐state lighting. Excited‐state …
Gradual Carrier Filling Effect in “Green” InGaN/GaN Quantum Dots: Femtosecond Carrier Kinetics with Sequential Two-Photon Absorption
Quantum dots (QDs) allow for a significant amount of strain relaxation, which is helpful in
GaN systems where a large lattice mismatch needs to be accommodated. InGaN QDs with a …
GaN systems where a large lattice mismatch needs to be accommodated. InGaN QDs with a …
GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors
GaN-based high electron mobility transistors (HEMTs) have received much attention due to
their potential usage in radio-frequency and high power applications. However, the …
their potential usage in radio-frequency and high power applications. However, the …