We have systematically studied the growth, by the Czochralski method, and basic physical
properties of a 2 cm and 2 in. diameter bulk β-(Al x Ga 1− x) 2 O 3 single crystal with [Al]= 0 …

Abstract (Ba (1–x) Bi x)(Ti (1–x) Mg 2 x/3 Ta x/3) O 3 (BBTMT-x, x= 0.075, 0.1, 0.125, and
0.15) ceramics were manufactured via a solid-phase reaction method. The pseudo-cubic …

Abstract β-gallium oxide (β-Ga2O3), as the typical representative of the fourth generation of
semiconductors, has attracted increasing attention owing to its ultra-wide bandgap, superior …

A method is proposed for increasing the radiation resistance of semiconductor crystals (Al x
Ga 1-x) 2 O 3, which are promising for creating power electronics and optoelectronic devices …

In this paper, the effects of oxygen vacancy and gallium vacancy on the optical and
scintillation properties of undoped β-Ga2O3 crystal and 2.5 mol% Al doped gallium oxide …

Abstract Bulk (Al x Ga 1− x) 2 O 3 crystals with an Al fraction x in the range from 0.0 to 0.23
were successfully grown by the Czochralski method. An increase in the band gap from 4.7 to …

A bandgap bowing parameter of 0.4±0.2 eV for β-(Al x Ga 1− x) 2 O 3 alloys, with Al
compositions (x) up to 0.35, has been determined from the bandgap obtained from low …

Ga2O3 is a kind of wide-band gap semiconductor, which has great potential in deep
ultraviolet detection because of its high efficiency and fast response. Doping can improve …

Single crystals of undoped and Co-doped- with different doping concentration have been
grown using optical floating zone technique. The powder X-ray diffraction analysis shows no …

With comprehensive crystal growth experiments of β‐(AlxGa1‐x) 2O3 by the Czochralski
method this work concludes a maximum [Al]= 40 mol%(35 mol% in the melt) that can be …