The effect of stress on HfO2-based ferroelectric thin films: A review of recent advances
HfO 2-based thin films have raised considerable interest in ferroelectric memory devices due
to their thickness scalability and process compatibility with CMOS. Stress exhibits a …
to their thickness scalability and process compatibility with CMOS. Stress exhibits a …
Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film
In this study, we investigate the effects of various electrodes on the ferroelectric properties of
ultrathin HfZrO x (HZO) films. The ferroelectric polarization is totally suppressed in the HZO …
ultrathin HfZrO x (HZO) films. The ferroelectric polarization is totally suppressed in the HZO …
Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering
Hafnia-based ferroelectric tunnel junctions (FTJs) have great potential for use in logic in
nonvolatile memory because of their complementary metal–oxide–semiconductor process …
nonvolatile memory because of their complementary metal–oxide–semiconductor process …
High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0. 5Zr0. 5O2 devices by control of oxygen-deficient layer
The formation of an interfacial layer is believed to affect the ferroelectric properties in HfO 2
based ferroelectric devices. The atomic layer deposited devices continue suffering from a …
based ferroelectric devices. The atomic layer deposited devices continue suffering from a …
Effect of forming gas high-pressure annealing on metal-ferroelectric-semiconductor hafnia ferroelectric tunnel junction
The various structures of ferroelectric tunnel junctions (FTJs) are widely studied. Among
them, metal-ferroelectric-semiconductor (MFS) FTJs show great tunneling electroresistance …
them, metal-ferroelectric-semiconductor (MFS) FTJs show great tunneling electroresistance …
Effect of insertion of dielectric layer on the performance of Hafnia ferroelectric devices
Hafnia-based ferroelectric (FE) devices have attracted significant attention as nonvolatile
memory devices due to their compatibility with complementary metal–oxide–semiconductor …
memory devices due to their compatibility with complementary metal–oxide–semiconductor …
CMOS-compatible fabrication of low-power ferroelectric tunnel junction for neural network applications
YS Kuo, SY Lee, CC Lee, SW Li… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
A low-cost fabrication process of Hf Zr x O 2 (HZO) nonvolatile memory (NVM) was proposed
and its characteristics were investigated. We successfully fabricated a ferroelectric tunnel …
and its characteristics were investigated. We successfully fabricated a ferroelectric tunnel …
High Pressure Microwave Annealing Effect on Electrical Properties of HfxZr1–xO Films near Morphotropic Phase Boundary
In this paper, we report for the first time the effect of high-pressure microwave annealing
(HPMWA) on the electrical properties of hafnium zirconium oxide capacitors. The high …
(HPMWA) on the electrical properties of hafnium zirconium oxide capacitors. The high …
Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing
The back-end-of-line (BEOL) processing compatibility of sputtered ferroelectric hafnium
zirconium oxide (HZO) thin films is demonstrated on sputtered TiN/HZO/TiN thin-film …
zirconium oxide (HZO) thin films is demonstrated on sputtered TiN/HZO/TiN thin-film …
[HTML][HTML] Improvement of polarization switching in ferroelectric transistor by interface trap reduction for brain-inspired artificial synapses
Numerous devices have been studied to accomplish a brain-inspired neuromorphic
computing system; however, their characteristics require improvement to enhance operation …
computing system; however, their characteristics require improvement to enhance operation …