Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
Highly scaled GaN complementary technology on a silicon substrate
This article reports on the scaling of GaN complementary technology (CT) on a silicon
substrate to push its performance limits for circuit-level applications. The highly scaled self …
substrate to push its performance limits for circuit-level applications. The highly scaled self …
GaN ring oscillators operational at 500° C based on a GaN-on-Si platform
A study of GaN for high temperature (HT, up to 500° C) digital circuits was conducted. A HT-
robust GaN-on-Si technology based on enhancement-mode p-GaN-gate AlGaN/GaN high …
robust GaN-on-Si technology based on enhancement-mode p-GaN-gate AlGaN/GaN high …
GaN memory operational at 300° C
The most commonly used memory cells, namely a 32-bit-bit read-only memory, a 1-bit 4-
transistor static random-access memory, D latch, and D flip-flop (DFF), were demonstrated …
transistor static random-access memory, D latch, and D flip-flop (DFF), were demonstrated …
Enhancement-mode GaN transistor technology for harsh environment operation
This letter reports an enhancement-mode (E-mode) GaN transistor technology which has
been demonstrated to operate in a simulated Venus environment (460° C,~ 92 atm …
been demonstrated to operate in a simulated Venus environment (460° C,~ 92 atm …
Analysis of drain-dependent threshold voltage and false turn-on of Schottky-type p-GaN gate HEMT in bridge-leg circuit
To assess GaN power transistors' capability to maintain a decent enhancement-mode
operation under high voltage switching operation, the impact of negative threshold voltage …
operation under high voltage switching operation, the impact of negative threshold voltage …
Dynamic Performance Analysis of Logic Gates Based on p-GaN/AlGaN/GaN HEMTs at High Temperature
R Wang, L Jia, X Gao, J He, Z Cheng… - IEEE Electron …, 2023 - ieeexplore.ieee.org
The high-temperature operation of the AlGaN/GaN high electron mobility transistors
(HEMTs) and direct-coupled FET logic (DCFL) inverters, NOR gates, and NAND gates are …
(HEMTs) and direct-coupled FET logic (DCFL) inverters, NOR gates, and NAND gates are …
Stable high temperature operation of p-GaN gate HEMT with etch-stop layer
High-temperature operation of the p-GaN gate high-electron-mobility transistor (HEMT) was
investigated, specifically up to 500° C. The p-GaN gate HEMT demonstrated stable behavior …
investigated, specifically up to 500° C. The p-GaN gate HEMT demonstrated stable behavior …
[HTML][HTML] Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments
This Letter reports the device and material investigations of enhancement-mode p-GaN-gate
AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other …
AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other …
Study on a p-GaN HEMT with composite passivation and composite barrier layers
J Cheng, Q Wang, Y Liu, G Ding, M Zhang… - Semiconductor …, 2024 - iopscience.iop.org
A novel structure of p-GaN high-electron-mobility transistor (HEMT) is proposed and studied.
It features two composite layers. One is the composite passivation (CP) layer consisting of Si …
It features two composite layers. One is the composite passivation (CP) layer consisting of Si …