Abstract Modulation doped metamorphic In 0.75 Ga 0.25 As/In 0.75 Al 0.25 As quantum
wells (QW) were grown on GaAs substrates by molecular beam epitaxy (MBE) with step …

A midinfrared quantum cascade laser with high wall-plug efficiency is analyzed by means of
an ensemble Monte Carlo method. Both the carrier transport and the cavity field dynamics …

A pronounced anisotropy is observed in the low-temperature mobility of a two-dimensional
electron gas formed in an In 0.75 Ga 0.25 As/In 0.75 Al 0.75 As quantum well grown on a …

InAs quantum wells (QWs) are promising material systems due to their small effective mass,
narrow bandgap, strong spin–orbit coupling, large g-factor, and transparent interface to …

We present a systematic experimental investigation of an unusual transport phenomenon
observed in two-dimensional (2D) electron gases in Si/SiGe heterostructures under integer …

Abstract We have grown In 0.75 Ga 0.25 As/In 0.75 Al 0.25 As modulation-doped
hetrostructure on GaAs substrate via InAlAs step-graded buffer by molecular beam epitaxy …

The effect of tensile and compressive strain on low‐temperature electron transport (τt) and
quantum (τq) lifetimes are analyzed as function of well width (w) in InxGa1− xAs/In0. 52Al0 …

We have studied electronic and structural characterizations of high indium content
metamorphic InGaAs/InAlAs modulation-doped heterostructures. An improved low …

The influence of a layer of InAs quantum dots on the transport properties of a nearby two-
dimensional electron gas 2DEG in an InGaAs/InP quantum well is investigated. The …

This paper reports on the observation and analysis of magnetotransport phenomena in the
nonlinear differential resistance rxx= d V xx/d I of high-mobility In x Ga 1− x As/InP and …