Atomic and close-to-atomic scale manufacturing: a review on atomic layer removal methods using atomic force microscopy
Manufacturing at the atomic scale is the next generation of the industrial revolution. Atomic
and close-to-atomic scale manufacturing (ACSM) helps to achieve this. Atomic force …
and close-to-atomic scale manufacturing (ACSM) helps to achieve this. Atomic force …
Precursor concentration dependent hydrothermal NiO nanopetals: Tuning morphology for efficient applications
A precursor's concentration dependent surface morphologies of NiO nanopetals (NPs) have
been studied for designing application-specific nanomaterials by hydrothermal technique …
been studied for designing application-specific nanomaterials by hydrothermal technique …
Voltage induced local hysteretic phase switching in silicon
JS Sekhon, L Aggarwal, G Sheet - Applied Physics Letters, 2014 - pubs.aip.org
We report the observation of dc-bias induced 180 phase switching in silicon wafers by local-
probe microscopy and spectroscopy. The switching is hysteretic and shows remarkable …
probe microscopy and spectroscopy. The switching is hysteretic and shows remarkable …
Comparison of KOH and TMAH etching on sinw arrays fabricated via AFM lithography
Silicon nanowire (SiNW) arrays were fabricated by using top-down fabrication approach via
atomic force microcopy (AFM) lithography on silicon-on-insulator (SOI)(100) substrate. Local …
atomic force microcopy (AFM) lithography on silicon-on-insulator (SOI)(100) substrate. Local …
[HTML][HTML] Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM …
The optimization of etchant parameters in wet etching plays an important role in the
fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide …
fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide …
Structure fabrication on silicon at atomic and close-to-atomic scale using atomic force microscopy: Implications for nanopatterning and nanodevice fabrication
In this paper, the atomic-scale structure fabrication on Si (100) substrate using atomic force
microscopy (AFM) with the aid of electrochemical and mechanical processes in a humid …
microscopy (AFM) with the aid of electrochemical and mechanical processes in a humid …
Conductive polycrystalline diamond probes for local anodic oxidation lithography
AJ Ulrich, AD Radadia - Nanotechnology, 2015 - iopscience.iop.org
This is the first report characterizing local anodic oxidation (LAO) lithography performed
using conductive monolithic polycrystalline diamond (MD) and conductive polycrystalline …
using conductive monolithic polycrystalline diamond (MD) and conductive polycrystalline …
Fabrication and simulation of single crystal p-type Si nanowire using SOI technology
A Dehzangi, F Larki, MG Naseri, M Navasery… - Applied Surface …, 2015 - Elsevier
Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics
have attracted much attention due to their major role in device fabrication. In the present …
have attracted much attention due to their major role in device fabrication. In the present …
Effect of lateral Gate Design on the Performance of Junctionless Lateral Gate Transistors
In this paper, we investigate the effect of lateral gate design on performance of a p-type
double lateral gate junctionless transistors (DGJLTs) with an air gate gap. The impact of …
double lateral gate junctionless transistors (DGJLTs) with an air gate gap. The impact of …
[HTML][HTML] Characterization of surface modification in atomic force microscope-induced nanolithography of oxygen deficient La0. 67Ba0. 33MnO3− δ thin films
EK Tanyi, RM Kolagani, P Srivastava, W Vanderlinde… - AIP Advances, 2014 - pubs.aip.org
We report our studies of the nanolithographic surface modifications induced by an Atomic
Force Microscope (AFM) in epitaxial thin films of oxygen deficient Lanthanum Barium …
Force Microscope (AFM) in epitaxial thin films of oxygen deficient Lanthanum Barium …