Progress in piezotronics and piezo-phototronics of quantum materials

L Zhu, ZL Wang - Journal of Physics D: Applied Physics, 2019 - iopscience.iop.org
Piezotronic and piezo-phototronic effects reveal promising applications in the third-
generation semiconductors with non-centrosymmetric structures. With the size of …

A review of III–V planar nanowire arrays: Selective lateral VLS epitaxy and 3D transistors

C Zhang, X Miao, KD Chabak, X Li - Journal of Physics D …, 2017 - iopscience.iop.org
Nanowires have long been regarded as a promising architecture for beyond Si CMOS logic,
future III–V RF electronics, next generation optoelectronic applications, as well as …

Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire.

X Wang, R Yu, C Jiang, W Hu, W Wu… - … (Deerfield Beach, Fla …, 2016 - europepmc.org
The piezotronic effect is applied to modulate the physical properties of heterojunction
electron gas and thus tune the electric transport in AlGaN/AlN/GaN heterostructure …

High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth

X Miao, K Chabak, C Zhang, P K. Mohseni… - Nano Letters, 2015 - ACS Publications
Wafer-scale defect-free planar III–V nanowire (NW) arrays with∼ 100% yield and precisely
defined positions are realized via a patterned vapor–liquid–solid (VLS) growth method …

Relationship between planar GaAs nanowire growth direction and substrate orientation

RS Dowdy, DA Walko, X Li - Nanotechnology, 2012 - iopscience.iop.org
Planar GaAs nanowires are epitaxially grown on GaAs substrates of various orientations, via
the Au-catalyzed vapor–liquid–solid mechanism using metal organic chemical vapor …

Piezotronics and piezo-phototronics based on a-axis nano/microwires: fundamentals and applications

X Wang, W Peng, C Pan, ZL Wang - Semiconductor Science and …, 2017 - iopscience.iop.org
One-dimensional semiconductors with wurtzite structure, such as GaN, ZnO and CdS
nano/microwires, exhibit superior semiconductor, piezoelectric and mechanical properties …

Crystallographic mapping of guided nanowires by second harmonic generation polarimetry

L Neeman, R Ben-Zvi, K Rechav, R Popovitz-Biro… - Nano Letters, 2017 - ACS Publications
The growth of horizontal nanowires (NWs) guided by epitaxial and graphoepitaxial relations
with the substrate is becoming increasingly attractive owing to the possibility of controlling …

Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates

R Dowdy, DA Walko, SA Fortuna… - IEEE Electron Device …, 2012 - ieeexplore.ieee.org
A self-aligned unidirectional planar GaAs nanowire (NW) array is realized by growing on
(110) GaAs substrates through the Au-catalyzed vapor-liquid-solid mechanism. All NWs on …

Monolithic barrier-all-around high electron mobility transistor with planar GaAs nanowire channel

X Miao, C Zhang, X Li - Nano letters, 2013 - ACS Publications
High-quality growth of planar GaAs nanowires (NWs) with widths as small as 35 nm is
realized by comprehensively mapping the parameter space of group III flow, V/III ratio, and …

Vapor-liquid-solid growth of semiconductor nanowires

JM Redwing, X Miao, X Li - Handbook of crystal growth, 2015 - Elsevier
The vapor-liquid-solid (VLS) growth technique has advanced significantly over the past
several decades. This technique has progressed from an interesting method for whisker …