The success of silicon photonics is sparking widespread interest in photonic integrated
circuits at visible light wavelengths using SiN and other waveguiding platforms. Compact …

We propose a novel laser diode (LD) fabrication process that yields 100 μm-cavity GaN-
based edge emitting LDs with cleaved facets. In this process, epitaxial layers for LDs are …

We experimentally demonstrate the difference between a ridge polariton laser and a
conventional edge-emitting ridge laser operating under electron-hole population inversion …

We report on short cavity single transverse mode LDs employing-type InAlN cladding layers.
Threshold currents in the blue and green spectral range of 3.3 and 12.0 mA are …

The main objective of this work is to demonstrate and validate the feasibility of fabricating
(Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry …

Single longitudinal mode continuous-wave operation of GaN-based distributed Bragg
reflector (DBR) laser diodes with 10th-order surface gratings is demonstrated. The DBR …

We report broad bandwidth blue superluminescent light-emitting diodes (SLEDs) based on
a short-cavity active region. The dependencies of amplified spontaneous emission (ASE) …

III-Nitride Laser diodes (LDs) emitting in the Ultra-Violet A (UVA) range with various cavity
lengths, down to m, were demonstrated by implementing etched facets. Operating without …

The cavity length of a semiconductor laser plays a key role in its operation and dynamic
behaviour. Moreover, downsizing the quantum well (QW) laser chip is required for specific …

We proposed a design scheme to enable the monolithic integration between a silicon
waveguide and a 1.3 μm wavelength band III–V quantum dot laser, which is epitaxially …