In the last 15 years, the global demand for power saving, efficiency, and weight, size, and
cost reduction in both the consumer and the industrial fields have strongly pushed the …

Insulated-gate bipolar transistor (IGBT) short-circuit failure modes have been under research
for many years, successfully paving the way for device short-circuit ruggedness …

A test bench is proposed to study, at die-level, the power losses and current distribution in
power devices. It is based on an infrared camera and a flexible half-bridge resonant inverter …

The stitch wire configuration is widely adopted for large-area IGBT chips. However, an
inhomogeneous wire current density introduces uneven self-heating and nonuniform chip …

Turn-off failure under clamped inductive load, is one of the most concerns in insulated gate
bipolar transistor (IGBT) chips. Besides, this turn-off failure can be attributed to two causes …

A novel solution for off-chip electrothermal studies in power devices at die level and short
timescales is reported. The proposed method involves acquiring a sequence of thermal …

IGBT power module is the key component of the power electronic converter, but it has the
lowest reliability. The junction temperature is the crucial factor which affects power module's …

Power electronic devices such as metal oxide semiconductor field-effect transistors
(MOSFETs), insulating gate bipolar transistors (IGBTs) have high power density and weak …

A basic problem in the IGBT short-circuit failure mechanism study is to obtain realistic
temperature distribution inside the chip, which demands accurate electrical simulation to …

Die-level current crowding phenomena are analyzed at the microsecond timescale with an
internal IR-Laser Deflection set-up. To this end, the 4H-SiC plasma-optical coefficient for the …