SiC and GaN devices–wide bandgap is not all the same
N Kaminski, O Hilt - IET Circuits, Devices & Systems, 2014 - Wiley Online Library
Silicon carbide (SiC)‐diodes have been commercially available since 2001 and various SiC‐
switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power …
switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power …
Current status and perspectives of ultrahigh-voltage SiC power devices
T Kimoto, Y Yonezawa - Materials Science in Semiconductor Processing, 2018 - Elsevier
Recent progress in the SiC material and ultrahigh-voltage devices is reviewed. Regarding
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …
Vertical power diodes in bulk GaN
D Disney, H Nie, A Edwards, D Bour… - … devices & IC's …, 2013 - ieeexplore.ieee.org
Vertical diodes with breakdown voltages up to 2.6 kV have been fabricated on bulk GaN
substrates. The measured figures-of-merit of these devices show performance near the …
substrates. The measured figures-of-merit of these devices show performance near the …
SiC and GaN devices-competition or coexistence?
N Kaminski, O Hilt - 2012 7th International Conference on …, 2012 - ieeexplore.ieee.org
SiC-diodes are commercially available for 10 years and various SiC-switches have been
commercialised recently. Now GaN-devices are emerging and first low voltage devices are …
commercialised recently. Now GaN-devices are emerging and first low voltage devices are …
15 kV-class implantation-free 4H-SiC BJTs with record high current gain
A Salemi, H Elahipanah, K Jacobs… - IEEE Electron …, 2017 - ieeexplore.ieee.org
Implantation-free mesa-etched ultra-high-voltage (0.08 mm 2) 4H-SiC bipolar junction
transistors (BJTs) with record current gain of 139 are fabricated, measured, and analyzed by …
transistors (BJTs) with record current gain of 139 are fabricated, measured, and analyzed by …
Experimental Demonstration and Analysis of a 1.35-kV 0.92-m SiC Superjunction Schottky Diode
X Zhong, B Wang, J Wang… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper presents the fabrication, experimental analysis and electrical characterization of
the first functional SiC superjunction (SJ) device. A trench-etching-and-sidewall-implant …
the first functional SiC superjunction (SJ) device. A trench-etching-and-sidewall-implant …
SiC and GaN power semiconductor devices
TK Gachovska, JL Hudgins - Power electronics handbook, 2018 - Elsevier
Wide bandgap semiconductors such as SiC and GaN have drawn a lot of attention in power
applications due to their superior material properties such as high critical electric field …
applications due to their superior material properties such as high critical electric field …
1200-V 5.2- 4H-SiC BJTs With a High Common-Emitter Current Gain
HS Lee, M Domeij, CM Zetterling… - IEEE Electron …, 2007 - ieeexplore.ieee.org
This letter presents fabrication of a power 4H-SiC bipolar junction transistor (BJT) with a high
open-base breakdown voltage BV CEO ap 1200 V, a low specific on-resistance R SP_ON …
open-base breakdown voltage BV CEO ap 1200 V, a low specific on-resistance R SP_ON …
5.8-kV implantation-free 4H-SiC BJT with multiple-shallow-trench junction termination extension
H Elahipanah, A Salemi, CM Zetterling… - IEEE Electron Device …, 2014 - ieeexplore.ieee.org
Implantation-free 4H-SiC bipolar junction transistors with multiple-shallow-trench junction
termination extension have been fabricated. The maximum current gain of 40 at a current …
termination extension have been fabricated. The maximum current gain of 40 at a current …
Fabrication of 2700-V 12- Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50
High-voltage blocking (2.7-kV) implantation-free SiC bipolar junction transistors with low on-
state resistance (12 mΩ⋅cm^2) and high common-emitter current gain of 50 have been …
state resistance (12 mΩ⋅cm^2) and high common-emitter current gain of 50 have been …