A review of SiC power module packaging: Layout, material system and integration
Silicon-Carbide (SiC) devices with superior performance over traditional silicon power
devices have become the prime candidates for future high-performance power electronics …
devices have become the prime candidates for future high-performance power electronics …
A review of high-speed GaN power modules: state of the art, challenges, and solutions
Wide bandgap (WBG) devices are a desirable choice for high-density energy conversion
systems. In high-speed hard-switching applications, voltage overshoot across device …
systems. In high-speed hard-switching applications, voltage overshoot across device …
A survey of EMI research in power electronics systems with wide-bandgap semiconductor devices
Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due
to their superior characteristics compared to their Si counterparts. However, their fast …
to their superior characteristics compared to their Si counterparts. However, their fast …
Characterization and implementation of dual-SiC MOSFET modules for future use in traction converters
Silicon (Si) insulated-gate bipolar transistors are widely used in railway traction converters.
In the near future, silicon carbide (SiC) technology will push the limits of switching devices in …
In the near future, silicon carbide (SiC) technology will push the limits of switching devices in …
Modeling and validation of common-mode emissions in wide bandgap-based converter structures
AN Lemmon, AD Brovont, CD New… - … on Power Electronics, 2020 - ieeexplore.ieee.org
Modern power converters designed with wide band-gap (WBG) semiconductors are known
to generate substantial conducted electromagnetic interference (EMI) as a side effect of high …
to generate substantial conducted electromagnetic interference (EMI) as a side effect of high …
Optimized Power Modules for Silicon Carbide mosfet
G Regnat, PO Jeannin, D Frey… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
A new 3-D power module dedicated to SiC mosfet is presented. It is based on printed circuit
board embedded die technology and is compared with a standard power module. After …
board embedded die technology and is compared with a standard power module. After …
High performance SiC power module based on repackaging of discrete SiC devices
Increased adoption of electric vehicles, photovoltaic, and battery energy storage systems is
driving the need for high-current SiC power modules. The state-of-the-art multichip module …
driving the need for high-current SiC power modules. The state-of-the-art multichip module …
1200 V/650 V/160 A SiC+ Si IGBT 3L hybrid T-type NPC power module with enhanced EMI shielding
Three-level (3L) inverters suffer from higher parasitic inductance due to the increased
number of series-connected switches in a single current commutation loop (CCL) results in a …
number of series-connected switches in a single current commutation loop (CCL) results in a …
Voltage suppression in wire-bond-based multichip phase-leg SiC MOSFET module using adjacent decoupling concept
The silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has a
more serious voltage overshoot than the silicon insulated gate bipolar transistor (IGBT) due …
more serious voltage overshoot than the silicon insulated gate bipolar transistor (IGBT) due …
Characterization of low-inductance SiC module with integrated capacitors for aircraft applications requiring low losses and low EMI issues
B Cougo, HH Sathler, R Riva… - … on Power Electronics, 2020 - ieeexplore.ieee.org
Future aircrafts will be composed of high number of power converters having always higher
power density and efficiency. In order to increase performance of such converters, a good …
power density and efficiency. In order to increase performance of such converters, a good …