We present a process flow for wafer-scale fabrication of a surface phase grating with sub-
micron feature sizes from a single semiconductor material. We demonstrate this technique …

Computers and other electronic devices are an integral and ubiquitous part of the modern
world. One of the key drivers for the development, power, cost, and availability of these …

As feature sizes have diminished the need for extremely thin photoresist films has grown.
Given the poor selectivity of typical resists with respect to silicon during plasma etching, it …

The demand for ever-smaller devices increases with the development of the semiconductor
industry. High-resolution patterning based on lithography is significant to fabricate ultra …

Initial readiness of EUV patterning has been demonstrated at the 7-nm device node with the
focus now shifting to driving the'effective'k1 factor and enabling the second generation of …

As lithographic resolution has increased to meet the demand for smaller devices it has been
necessary to use extremely thin photoresist films to mitigate aspect ratio related resist …

Initial readiness of extreme ultraviolet (EUV) patterning has been demonstrated at the 7-nm
device node with the focus now shifting to driving the “effective” k1 factor and enabling the …

The advance of lithographic resolution has made it necessary to adopt extremely thin
photoresist films for the fabrication of “2× nm” structures in order to mitigate problems such …

One of the key challenges to high resolution resist patterning is pattern collapse. Using a
new scanning probe microscopy (SPM), Peak Force TM tapping, we map nano-mechanical …

One theoretical route towards fault proof quantum computing is the realisation of Majorana
Zero Modes (MZMs) at the ends of InSb nanowires coupled to conventional s-wave …