Selective etching of silicon oxide (SiO2) against silicon (Si) using anhydrous hydrogen
fluoride (HF) vapor has been used for semiconductor device fabrication. We studied the …

We report the surface reaction mechanism of the atomic layer deposition (ALD) of niobium
oxide films by combining experimental and theoretical studies. Tert-butylimido tris …

Abstract 3D NAND flash memory with vertically stacked cells has been developed to break
through the limits of technology nodes. However, during the selective etching process, it is …

The selective Co capping is essential for improving the electromigration resistance of the
copper interconnects. We studied the mechanism of selective Co deposition using CpCo …

The SiO2 layers, as the dielectric in the multistack storage cells of 3D NAND, are
detrimentally dissolved by phosphoric acid (PA) during the selective Si3N4 etching. The …

Developing advanced performance polypropylene (PP) composites with less smoke, eco-
friendly and efficient flame retardants (FRs) has been a growing focus of research. In …

Amorphous materials are increasingly considered for electronic and energy applications.
However, modeling site-specific processes on amorphous materials is prohibitively …

The study of the system formed by ortho-and pyrophosphoric acid was resumed in order to
understand the crystallization conditions of these two compounds and to highlight the …

In the need for a more compact and efficient optical phased array with a wide steering beam
for LIDAR applications, a wide steering array with high resolution is desirable. However, in …

Batch-processing wet-etch reactors are the key equipment widely used in chip fabrication,
and their performance is largely affected by the internal structure. This work develops a three …