Analysis of subthreshold swing in junctionless cylindrical surrounding gate MOSFET using Gaussian doping profile
H Jung - International Journal of Advanced Technology and …, 2022 - search.proquest.com
The subthreshold swing (SS) model is presented for a junctionless cylindrical surrounding
gate (JLCSG) metal oxide semiconductor field effect transistor (MOSFET) with a Gaussian …
gate (JLCSG) metal oxide semiconductor field effect transistor (MOSFET) with a Gaussian …
[PDF][PDF] Drain current models for single-gate MOSFETs & undoped symmetric & asymmetric double-gate SOI MOSFETs and quantum mechanical effects: a review
In this paper modeling framework for single gate conventional planar MOSFET and double
gate (DG) MOSFETS are reviewed. MOS Modeling can be done by either analytical …
gate (DG) MOSFETS are reviewed. MOS Modeling can be done by either analytical …
Modeling the CMOS characteristics of a completely depleted surrounding-gate nanotransistor and an unevenly doped working region
NV Masal'skii - Russian Microelectronics, 2019 - Springer
The issues of modeling the basic electrophysical characteristics of fully depleted
surrounding-gate CMOS nanotransistors with an unevenly doped working region are …
surrounding-gate CMOS nanotransistors with an unevenly doped working region are …
Проблемы моделирования 3D затворных полевых нанотранзисторов: архитектура с полностью охватывающим затвором
НВ Масальский - Нанотехнологии: разработка, применение-XXI век, 2019 - elibrary.ru
Постановка проблемы. Важная роль в решении проблемы достижения высокого
быстродействия и повышения степени интеграции отводится внедрению новых …
быстродействия и повышения степени интеграции отводится внедрению новых …
Моделирование характеристик КМОП нанотранзистора с полностью охватывающим затвором и неравномерно легированной рабочей областью
НВ Масальский - Микроэлектроника, 2019 - elibrary.ru
Обсуждаются вопросы моделирования основных электрофизических характеристик
полностью обедненных КМОП нанотранзисторов с полностью охватывающим …
полностью обедненных КМОП нанотранзисторов с полностью охватывающим …
[PDF][PDF] Thermal Noise Modeling &Analysis of SG MOSFET
S Panda, B Maji, AK Mukhopadhyay - AA, 2012 - Citeseer
The As the MOSFET is continuing to scale down, gate oxide tunneling is becoming an
important factor, and a SGMOSFET has been proposed and studied to reduce this effect. In …
important factor, and a SGMOSFET has been proposed and studied to reduce this effect. In …
[PDF][PDF] Threshold voltage modelling of DPDG MOSFET incorporating quantum mechanical effects
R Saha - 2016 - 20.198.91.3
MECHANICAL EFFECTS” has been carried out by RANITA SAHA (Examination Roll No:
M4ETC1606 and University Registration No: 128921 of 2014-15) under my guidance and …
M4ETC1606 and University Registration No: 128921 of 2014-15) under my guidance and …