US PATENT DOCUMENTS 2004O160812 A1 8/2004 Rinerson et al. 2004/0160817 A1
8/2004 Rinerson et al. 4,204,028 A 5/1980 Donley 2004/0160818 A1 8/2004 Rinerson et al …

2,655,609 A 10/1953 Shockley 2.971, 140 A 12/1959 Chappey et al. 3,796,926 A 3, 1974
Cole et al. 4,204,028 A 5/1980 Donley 4499, 557 A 2/1985 Holmberg et al. 4,646,266 A …

A memory cell is described, the memory cell comprising a dielectric rupture antifuse and a
layer of a resistivity-switching material arranged electrically in series, wherein the resistivity …

2020-01-29 Assigned to SUNRISE MEMORY CORPORATION reassignment SUNRISE
MEMORY CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT …

In some aspects, a method of forming a memory cell is pro vided that includes (1) forming a
first conductor above a Substrate;(2) forming a reversible resistance-switching ele ment …

US8233308B2 - Memory cell that employs a selectively deposited reversible resistance-switching
element and methods of forming the same - Google Patents US8233308B2 - Memory cell that …

(54) HETEROJUNCTION DEVICE COMPRISING 3,796,926 A 3, 1974 Cole et al. A
SEMCONDUCTOR ANDA 4,203,123 A 5/1980 Shanks RESISTIVITY-SWITCHING OXDE …

(54) MEMORY CELL THATEMPLOYSA 3,796,926 A 3, 1974 Cole et al. SELECTIVELY
DEPOSITED REVERSIBLE 4,204,028 A 5/1980 Donley RESISTANCE-SWITCHING …

A memory array and single-crystal circuitry are provided by wafer bonding (eg, adhesive
wafer bonding or anodic wafer bonding) in the same integrated circuit and interconnected by …

2,655,609 A 10/1953 Shockley 2.971, 140 A 12/1959 Chappey et al. 3,796,926 A 3, 1974
Cole et al. 4.204, 028 A* 5/1980 Donley....................... 428,432 4499, 557 A 2/1985 Holmberg …