Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature
IZ Mitrovic, M Althobaiti, AD Weerakkody… - Journal of Applied …, 2014 - pubs.aip.org
A study into the optimal deposition temperature for ultra-thin La 2 O 3/Ge and Y 2 O 3/Ge
gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for …
gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for …
Study on structural and thermal characteristics of heteroleptic yttrium complexes as potential precursors for vapor phase deposition
SMJ Beer, A Krusenbaum, M Winter… - European Journal of …, 2020 - Wiley Online Library
Yttrium oxide (Y2O3) thin films are implemented as a functional component in a broad field
of applications such as optics, electronics or thermal barrier coatings. Atomic layer …
of applications such as optics, electronics or thermal barrier coatings. Atomic layer …
Optical properties of nanocrystalline Y2O3 thin films grown on quartz substrates by electron beam deposition
T Wiktorczyk, P Biegański, J Serafińczuk - Optical Materials, 2016 - Elsevier
Yttrium oxide thin films of a thickness 221–341 nm were formed onto quartz substrates by
reactive physical vapor deposition in an oxygen atmosphere. An electron beam gun was …
reactive physical vapor deposition in an oxygen atmosphere. An electron beam gun was …
Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers
Without using any interfacial passivation layers, high-κ dielectric Y2O3, HfO2, and Ga2O3
(Gd2O3)[GGO], by electron beam evaporation in ultra-high-vacuum (UHV), have been …
(Gd2O3)[GGO], by electron beam evaporation in ultra-high-vacuum (UHV), have been …
Graphene-based modulation-doped superlattice structures
D Bolmatov, CY Mou - Journal of Experimental and Theoretical Physics, 2011 - Springer
The electronic transport properties of graphene-based superlattice structures are
investigated. A graphene-based modulation-doped superlattice structure geometry is …
investigated. A graphene-based modulation-doped superlattice structure geometry is …
Ga2O3 (Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices
Ga 2 O 3 (Gd 2 O 3)(GGO) directly deposited on Ge substrate in ultrahigh vacuum, without a
passivation layer such as GeO x N y or Si, has demonstrated excellent electrical …
passivation layer such as GeO x N y or Si, has demonstrated excellent electrical …
Wide-bandgap high-k Y2O3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors …
CX Li, PT Lai - Applied Physics Letters, 2009 - pubs.aip.org
High-k and wide-bandgap Y 2 O 3 was proposed as an interlayer in n-Ge metal-oxide-
semiconductor (MOS) capacitor with HfTiO gate dielectric for passivating its dielectric/Ge …
semiconductor (MOS) capacitor with HfTiO gate dielectric for passivating its dielectric/Ge …
Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing
O Bethge, C Zimmermann, B Lutzer, S Simsek… - Journal of Applied …, 2014 - pubs.aip.org
The impact of thermal post deposition annealing in oxygen at different temperatures on the
Ge/Y 2 O 3 interface is investigated using metal oxide semiconductor capacitors, where the …
Ge/Y 2 O 3 interface is investigated using metal oxide semiconductor capacitors, where the …
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer
HH Lu, JP Xu, L Liu, LS Wang, PT Lai… - Microelectronics …, 2016 - Elsevier
The interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with
yittrium-oxynitride interfacial passivation layer treated by N 2−/NH 3-plasma are …
yittrium-oxynitride interfacial passivation layer treated by N 2−/NH 3-plasma are …
Low-temperature grown single-crystal Si on epi Ge (001)-2× 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission
The capped Si expels completely the Ge dimers on top of the epi Ge (001)-2× 1 and exhibits
a multiphase electronic structure consisting of strained surface atoms bonded with Ge in the …
a multiphase electronic structure consisting of strained surface atoms bonded with Ge in the …