Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …

Pulse test techniques are widely adopted in characterizing both the static and dynamic
performances of semiconductor devices considering various device structures and operating …

Gallium nitride high-electron-mobility transistors (GaN HEMTs) exhibit dynamic ON-
resistance (dR on), where the ON-resistance immediately after turn-ON is higher than the dc …

The dynamic on-resistance (r ON) of two mainstream 600 V/650 V p-GaN gate power high-
electron-mobility transistors (HEMTs) with Ohmic-and Schottky-type p-GaN gate contacts are …

In this letter, the dynamic R on degradation mechanisms of the p-GaN gate HEMTs induced
by off-state stress are investigated with different passivation dielectrics AlON and SiN. The …

Dynamic on-resistance (dR on), where the on-resistance immediately after turn-on is higher
than the DC resistance, increases the conduction losses in power converters with gallium …

Gallium nitride (GaN) high electron mobility transistors (HEMTs) have demonstrated their
superior performance in consumer electronics. However, their longer-lifetime-demanding …

Abstract Transistor-based on Gallium Nitride (GaN) technology, has enabled energy-saving
power electronics to alleviate global energy utilization. Being the initial stages of the …

Gallium nitride high electron mobility transistors outperform Silicon devices due to their
excellent physical properties. However, being an immature technology, it exhibits dynamic …

In this article, the temperature-dependent dynamic ON-resistance () behaviors of GaN
enhancement-mode (E-mode) high-electron-mobility transistors (E-HEMTs) with and without …