Schottky barrier contacts of titanium nitride on n‐type silicon
CA Dimitriadis, S Logothetidis, I Alexandrou - Applied physics letters, 1995 - pubs.aip.org
Schottky contacts of TiN x thin films on n‐type Si (100) were fabricated by reactive
magnetron sputtering at room temperature. In situ spectroscopic ellipsometry was used to …
magnetron sputtering at room temperature. In situ spectroscopic ellipsometry was used to …
Identifying ferroelectric switching pathways in HfO2: first principles calculations under electric fields
T Maeda, B Magyari-Kope… - 2017 IEEE International …, 2017 - ieeexplore.ieee.org
The switching dynamics in the ferroelectric HfO2 is investigated using first principles
calculations. Several possible switching pathways were first identified based on symmetry …
calculations. Several possible switching pathways were first identified based on symmetry …
Flux Pinning Properties at Low Temperatures in Doped Films
A Tsuruta, Y Yoshida, Y Ichino… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
BaHfO 3 (BHO) is attracting attention as a new material forming nanorod as well as BaMO 3
(BMO: M= Zr, Sn), and it was reported that the flux pinning force of BHO nanorod is effective …
(BMO: M= Zr, Sn), and it was reported that the flux pinning force of BHO nanorod is effective …
Controllability of self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on a glass substrate
H Ohsawa, S Sasaki, A Hara - Japanese Journal of Applied …, 2016 - iopscience.iop.org
Self-aligned four-terminal n-channel (n-ch) and p-channel (p-ch) planar embedded metal
double-gate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a …
double-gate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a …
Epitaxial growth of metal phthalocyanines on hydrogen terminated vicinal surfaces of Si (111)
T Shimada, A Suzuki, T Sakurada, A Koma - Applied physics letters, 1996 - pubs.aip.org
Hydrogen‐terminated vicinal Si (111) surfaces provide quasi‐van der Waals substrates with
regularly spaced atomic height steps for the epitaxy of organic material films. Molecular …
regularly spaced atomic height steps for the epitaxy of organic material films. Molecular …
High density plasma chemical vapor deposition gap-fill mechanisms
HP Mungekar, YS Lee - Journal of Vacuum Science & Technology B …, 2006 - pubs.aip.org
As device sizes shrink beyond 100 nm, there is an increasing need to assess dielectric
gap-fill mechanisms for isolation applications in semiconductor processing. Since its …
gap-fill mechanisms for isolation applications in semiconductor processing. Since its …
Novel fabrication method for oxide semiconductors via atomic-additive mediated crystallization
N Itagaki - TENCON 2010-2010 IEEE Region 10 Conference, 2010 - ieeexplore.ieee.org
We report here a novel method of fabricating oxide semiconductors via a solid-phase
crystallization from amorphous phase. By introducing a large amount of nitrogen atoms to …
crystallization from amorphous phase. By introducing a large amount of nitrogen atoms to …
Demonstration of yield improvement for on-via MTJ using a 2-Mbit 1T-1MTJ STT-MRAM test chip
To realize a high-density spin-transfer-torque magnetic random access memory (STT-
MRAM) device comparable with a current dynamic random access memory (DRAM) device …
MRAM) device comparable with a current dynamic random access memory (DRAM) device …
Deep dry etching patterned silicon using GeSbSnOx thermal lithography photoresist
YH Lin, CC Yang, CT Yang, SW Chen… - IEEE Transactions …, 2011 - ieeexplore.ieee.org
An innovative chemical composition GeSbSnOx is introduced as positive-type photo-resist in
sub-micro scale lithography. Unlike the conventional acrylic type photo-resist, this innovative …
sub-micro scale lithography. Unlike the conventional acrylic type photo-resist, this innovative …
Performance of four-terminal low-temperature polycrystalline-silicon thin-film transistors and their application in CMOS inverters on glass substrates
H Ohsawa, H Utsumi, A Hara - Japanese Journal of Applied …, 2018 - iopscience.iop.org
High-performance and low-power-operation CMOS circuits comprising low-temperature (LT)
polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) are indispensable for integrated …
polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) are indispensable for integrated …