The metrological capability of the picosecond four-wave mixing (FWM) technique for
evaluation of the photoelectrical properties of GaN heterostructures grown on sapphire …

We applied a picosecond four-wave mixing technique for measurements of carrier lifetimes
and diffusion coefficients in highly excited epitaxial layers, semi-insulating and heavily …

Time‐resolved four‐wave mixing has been performed in InGaN/GaN/sapphire
heterostructures using picosecond pulses at 355 nm for carrier excitation. In‐plane diffusion …

We report on a study of deep levels in semi-insulating CdTe: Cl by means of a time-of-flight
spectral approach. By varying the wavelength of a pulsed optical source within the CdTe …

The low-temperature photoluminescence (PL) measurements revealed that Cd 0.9 Zn 0.1 Te
PL spectra consisted of three regions: the near-band-edge region with an emission peak I 0 …

2.5 Conclusions Dynamic gratings can be induced by interfering laser beams in almost any
optical material. Some selected works related to laser-induced gratings have been used as …

Abstract Properties of spin surfaces of heavy‐mass, light‐mass and split‐off bands of GaAs,
InAs, GaP, InP, GaSb, and InSb are presented under various approximations. A simple two …

We investigated nonequilibrium carrier generation, transport, and recombination processes
in differently doped bulk CdTe crystals by the contactless nonlinear optical technique–the …

Utilizing four-dimensional scanning ultrafast electron microscopy (4D-SUEM) is a powerful
tool to monitor charge dynamics at material surfaces and interfaces especially for the …

Defect related carrier recombination and transport properties have been investigated in
differently doped HVPE GaN substrates and CVD diamond layers. Carrier generation by …