The synapse is a crucial element in biological neural networks, but a simple electronic
equivalent has been absent. This complicates the development of hardware that imitates …

In this review the different concepts of nanoscale resistive switching memory devices are
described and classified according to their I–V behaviour and the underlying physical …

Adv. Mater. 2012, 24, 762–766 duration of a each pulse. For vmax, a value in excess of the
activation threshold vth≈ 0.35 V was required (see Supporting Information). The resulting …

We overview several efforts to emulate functionalities of basic building blocks, ie neurons
and synapses, of a mammal's brain by means of non-biological inorganic systems. These …

Abstract Spin-transfer torque,(STT) allows the electrical control of magnetic states in
nanostructures,,. The STT in magnetic tunnel junctions (MTJs) is of particular importance …

We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by
spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the …

A spin-transfer torque switched magnetic tunnel junction (MTJ) is a memory element in
modern magnetic random access memory (MRAM), a CMOS-integrated technology that is …

Key design parameters of 64 Mb STT-MRAM at 90-nm technology node are discussed. A
design point was developed with adequate TMR for fast read operation, enough energy …

Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse
classes of materials and devices using electric currents, leading to novel spintronic memory …

Advances in nanofabrication now allow us to manipulate magnetic material at micro-and
nanoscales. As the steps of design, modelling and simulation typically precede that of …