The p–n junction with bipolar characteristics sets the fundamental unit to build electronics
while its unique rectification behavior constrains the degree of carrier tunability for expanded …

This paper reviews recent research on III–V nitrides, including their physical and chemical
properties, synthesis methods, and applications in optoelectronic devices. III–V nitrides …

The operational principle of semiconductor devices critically relies on the band structures
that ultimately govern their charge‐transfer characteristics. Indeed, the precise orchestration …

Gallium oxide (β‐Ga2O3) is a prominent representative of the new generation of wide‐
bandgap semiconductors, boasting a bandgap of≈ 4.9 eV. However, the growth process of …

Gallium nitride (GaN) based high elect mobility transistors (HEMTs) possess a multitude of
excellent characteristics, enabling them to overcome the performance limitations of …

This work reports a high‐detectivity solar‐blind deep ultraviolet photodetector with a fast
response speed, based on a nitrogen‐doped graphene/βGa2O3/GaN p‐i‐n heterojunction …

Gallium nitride (GaN) is an important third-generation semiconductor material. However, due
to its high hardness, high brittleness and anisotropy, the material removal efficiency of GaN …

In this letter, we apply an oxidation technique for p-GaN to a normally-off p-GaN/AlGaN/GaN
HEMT to improve the threshold voltage and gate reliability. Oxygen-plasma and low …

The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …

GaN, due to its large band gap and high carrier mobility, has been widely used in fast-
response ultraviolet (UV) photodetectors (PDs). The existing junction-based and two …