Recent advancements in nanobiosensors: current trends, challenges, applications, and future scope

MB Kulkarni, NH Ayachit, TM Aminabhavi - Biosensors, 2022 - mdpi.com
In recent years, there has been immense advancement in the development of
nanobiosensors as these are a fundamental need of the hour that act as a potential …

InSnO: N homojunction thin-film transistors fabricated at room temperature

D Lin, JZ Yang, JR Cheng, XC Deng, YS Chen… - Vacuum, 2023 - Elsevier
Nitrogen-doped indium tin oxide (ITON) thin films of different thicknesses were deposited by
radio frequency magnetron sputtering. The crystallinity, surface morphologies, and chemical …

The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer

S Zhang, L Weng, B Liu, D Kuang, X Liu, B Jiang… - Vacuum, 2023 - Elsevier
For improving the properties of indium-gallium-tin oxide (IGTO) thin film transistors (TFTs)
based on solution method, indium-zinc oxide (IZO) thin film was used as a modification …

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

W Park, JH Park, JS Eun, J Lee, JH Na, SH Lee, J Jang… - Nanomaterials, 2023 - mdpi.com
The interest in low processing temperature for printable transistors is rapidly increasing with
the introduction of a new form factor in electronics and the growing importance of high …

Structural characterization of Zn2SnO4 epitaxial single crystal films prepared on c-cut α-Al2O3 films by magnetron sputtering

Z Gao, Y Xin, X Shang, X Xia, D Yu, Z Li - Vacuum, 2023 - Elsevier
Abstract Amorphous zinc stannate (Zn 2 SnO 4) films were deposited on α-Al 2 O 3 (0006)
substrate by magnetron sputtering. And single crystal Zn 2 SnO 4 films were obtained after …

Preparation and electrical characteristics of Li–N co-doped InZnAlO thin film transistors by radio frequency magnetron sputtering

W Yang, H Yang, J Su, X Zhang - Vacuum, 2022 - Elsevier
In this paper, amorphous Li–N co-doped InZnAlO (IZAO:(Li, N)) thin film transistors (TFTs)
with staggered bottom-gate structure were fabricated on SiO 2/Si substrates by radio …

Plasma damage control via adjusting the target to substrate distance used to prepare semi-transparent perovskite solar cells

HU Ha, HJ Seok, S Yoon, DG Lee, DW Kang, HK Kim - Vacuum, 2023 - Elsevier
To realize semi-transparent perovskite solar cells (ST-PSCs), a high-quality amorphous
transparent cathode must be deposited on the perovskite active layer without plasma …

Enhancement of electrical characteristics of SnGaO thin-film transistors via argon and oxygen plasma treatment

Y Lu, X Dai, J Yang, Y Liu, D Cao, F Lin, F Liu - Vacuum, 2024 - Elsevier
The impact of Ar or O 2 plasma treatment on the electrical characteristics of SnGaO thin film
transistors (TFTs) fabricated via solution method was examined. The findings of the study …

The influence of post-annealing temperature on indium-silicon oxide thin film transistors

S Arulkumar, S Parthiban, JY Kwon - Materials Science in Semiconductor …, 2022 - Elsevier
The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at
various temperatures and studied for thin-film transistor (TFT) active channel layer …

Maskless Direct-Write Lithography-Patterned Molybdenum Metal-Contacted Indium Silicon Oxide Thin-Film Transistors

S Arulkumar, K Shyaam, S Parthiban… - Journal of Electronic …, 2023 - Springer
In this work, indium silicon oxide (ISO) thin-film transistors (TFT) were developed with
molybdenum as the source and drain contact using sputtering and lithography techniques …