Trends in semiconductor defect engineering at the nanoscale
EG Seebauer, KW Noh - Materials Science and Engineering: R: Reports, 2010 - Elsevier
Defect engineering involves manipulating the type, concentration, spatial distribution, or
mobility of defects within a crystalline solid. Defect engineering in semiconductors has …
mobility of defects within a crystalline solid. Defect engineering in semiconductors has …
Kinetic Monte Carlo simulation for semiconductor processing: A review
I Martin-Bragado, R Borges, JP Balbuena… - Progress in Materials …, 2018 - Elsevier
Abstract The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate
the complex processing of semiconductor devices. In this review, some of the main …
the complex processing of semiconductor devices. In this review, some of the main …
Mechanisms of Three-Dimensional Solid-Phase Epitaxial Crystallization of Strontium Titanate
Strontium titanate (SrTiO3, STO) is a complex metal oxide with a cubic perovskite crystal
structure. Due to its easily described and understood crystal structure in the cubic phase …
structure. Due to its easily described and understood crystal structure in the cubic phase …
Crystallization of amorphous complex oxides: New geometries and new compositions via solid phase epitaxy
The crystallization of amorphous complex oxides via solid phase epitaxy enables a wide
range of opportunities in the formation of oxide materials in new geometries and with …
range of opportunities in the formation of oxide materials in new geometries and with …
Novel stress-memorization-technology (SMT) for high electron mobility enhancement of gate last high-k/metal gate devices
High-k/metal gate (HKMG) compatible high performance Source/Drain (S/D) stress-
memorization-technology (SMT) is presented. Channel stress generated by SMT can be …
memorization-technology (SMT) is presented. Channel stress generated by SMT can be …
Advances in ion beam modification of semiconductors
RG Elliman, JS Williams - Current Opinion in Solid State and Materials …, 2015 - Elsevier
This review provides an overview of the current status of ion-implantation research in silicon,
germanium and the compound semiconductors SiC, GaN and ZnO. The discussion of silicon …
germanium and the compound semiconductors SiC, GaN and ZnO. The discussion of silicon …
Formation of Hexagonal Phase 9R-Si in SiO/Si System upon Kr Ion Implantation
AA Nikolskaya, DS Korolev, AN Mikhaylov… - Moscow University …, 2023 - Springer
Hexagonal silicon polytypes have attracted significant attention within the scientific
community due to their potential applications in next-generation electronics and photonics …
community due to their potential applications in next-generation electronics and photonics …
Atomic imprint crystallization: Externally-templated crystallization of amorphous silicon
In this paper, we demonstrate the crystallization of an amorphous Si layer via atomic imprint
crystallization (AIC), where an amorphous Si layer is crystallized by solid phase epitaxy …
crystallization (AIC), where an amorphous Si layer is crystallized by solid phase epitaxy …
Solid-phase epitaxy
We review the field of solid-phase epitaxy (SPE), a crystallization process during which
atoms undergo bonding rearrangements that allow them to transfer from a metastable …
atoms undergo bonding rearrangements that allow them to transfer from a metastable …
Understanding Si (111) solid phase epitaxial regrowth using Monte Carlo modeling: Bi-modal growth, defect formation, and interface topology
I Martin-Bragado, B Sklenard - Journal of Applied Physics, 2012 - pubs.aip.org
This work studies the intriguing experimental observations that Si (111) solid phase epitaxial
regrowth velocity is not constant as recrystallization progresses, but has a sudden change …
regrowth velocity is not constant as recrystallization progresses, but has a sudden change …